低温下蛋白质基底薄膜晶体管的制备  

Fabrication of thin film transistors on protein substrate at low temperature

作　　者：张含悦 王超[1] 杨帆 王艳杰 刘芙男 ZHANG Han-yue;WANG Chao;YANG Fan;LIU Fu-nan(School of electrical and computer engineering,Jilin Jianzhu university,Changchun 130118,China)

机构地区：[1]吉林建筑大学电气与计算机学院,长春130118

出　　处：《吉林建筑大学学报》2022年第4期78-83,共6页Journal of Jilin Jianzhu University

基　　金：吉林省科技发展计划项目(20210203021SF,20200201177JC);吉林省教育厅科学技术研究项目(JJKH20210256KJ,JJKH20210277KJ,JJKH20210276KJ).

摘　　要：本文采用射频磁控溅射技术沉积铝掺杂氧化锌(AZO)薄膜作为有源层,成功制备以玉米蛋白膜为基底的AZO薄膜晶体管(AZO-TFT),并对该器件的电学特性进行了表征.系统论述了磁控溅射过程中不同的氧分压对AZO薄膜表面及其TFT器件电学性能的影响规律.结果表明,磁控溅射的氩氧比为80∶20时,AZO薄膜表面的粗糙度较小,其值RMS=1.867 nm;制备的AZO-TFT均为n-沟道增强型器件,且呈现良好的饱和特性.该晶体管的电学性能较优,其亚阈值摆幅为2.64 V/decade,阈值电压为1.2 V,电流开关比可达4.08×10^(3),为新型可生物降解薄膜晶体管技术奠定了实验基础.In this paper,aluminum-doped zinc oxide(AZO)thin film was deposited as the active layer by RF magnetron sputtering technology,and AZO thin film transistor(AZO-TFT)based on zein film was successfully fabricated,and the electrical characteristics of the device were characterized.The effects of different oxygen partial pressures on the surface of AZO thin film and the electrical properties of TFT devices during magnetron sputtering were systematically described.The results show that,when the argon-oxygen ratio is 80∶20,the roughness of AZO thin film is the lowest,the RMS value is 1.867 nm,and the device performance is the best.The sub-threshold swing of AZO-TFT device is 2.64 V.dec^(-1),the threshold voltage is 1.2 V,and the current on/off ratio is 4.08×10^(3).

关 键 词：玉米蛋白膜 可降解薄膜晶体管 铝掺杂氧化锌(AZO) 氩氧比 

分 类 号：TB383[一般工业技术—材料科学与工程]