铟掺杂氧化铈-氧化钛薄膜作为电致变色器件离子储存层的电化学性能研究  

Electrochemical Characterization of Indium-Doped CeO2-TiO2 Thin Films as Ion Storage Layer for Electrochromic Devices

作　　者：刘玉春 安佳钰 刘靖 曹静 孙冬兰[2] LIU Yuchun;AN Jiayu;LIU Jing;CAO Jing;SUN Donglan(College of Chemical Engineering and Material Science,Tianjin University of Science&Technolo‐gy,Tianjin 300457,China;College of Sciences,Tianjin University of Science&Technology,Tianjin 300457,China)

机构地区：[1]天津科技大学化工与材料学院,天津300457 [2]天津科技大学理学院,天津300457

出　　处：《电镀与精饰》2022年第8期44-50,共7页Plating & Finishing

基　　金：国家自然科学基金资助项目(21373150)。

摘　　要：采用溶胶-凝胶法在导电玻璃上沉积铟掺杂的氧化铈-氧化钛薄膜,并用X射线衍射、扫描电子显微镜、紫外-可见光吸收光谱和循环伏安法等分别对薄膜的晶体结构、表面形貌、光透过率和电化学性能进行表征。结果表明,铟掺杂的氧化铈-氧化钛薄膜是表面平整的非晶态结构,它的电荷容量和循环稳定性明显较未掺杂提高。在锂离子嵌入/脱出过程中,铟掺杂摩尔浓度为0.15 mol·L^(-1)的氧化铈-氧化钛薄膜循环500次有较高的嵌入电荷容量15.01 mC·cm^(-2),循环1200次该薄膜嵌入电荷容量仍稳定在15.00 mC·cm^(-2),且光透过率基本保持不变,表明该薄膜具有良好的循环稳定性。电化学性能和光透过率的结果表明它可作为电致变色器件的离子储存层。Indium-doped cerium-titanium oxide thin films were deposited onto fluorine-doped tin oxide-coated glass slides by sol–gel dip-coating process.X-Ray diffraction,scanning electron microscopy,ultraviolet-visible absorption spectroscopy and cyclic voltammetry were utilized to investigate their structure,morphology,optical and electrochemical properties.The results show that the indium-doped CeO_(2)-TiO_(2) thin films have an amorphous structure with a flat surface,and the films’ion storage capaci‐ty and electrochemical cycling stability are significantly improved.The 0.15 mol·L^(-1) indium doped CeO_(2)-TiO_(2) thin film has higher charge density(15.01 mC·cm^(-2),after 500 cycles)during the lithium ions intercalation.The film intercalation charge density can still be maintained at 15.00 mC·cm^(-2) after 1200 cycles without transmittance change,indicating that it has good electrochemical cycling stability.The electrochemical performance and transmittance results suggest that it can be used as an ion storage layer for electrochromic devices.

关 键 词：氧化铈-氧化钛薄膜 铟掺杂 溶胶-凝胶 离子储存层 电致变色 

分 类 号：O484[理学—固体物理]