基于氧化硅隧穿电子源的高压力微型电离真空传感器  

High-pressure Miniaturized Ionization Vacuum Sensor Based on SiO_(x)-based Tunneling Electron Source

作　　者：杨威[1] 詹芳媛 魏贤龙[1] YANG Wei;ZHAN Fangyuan;WEI Xianlong(Key Laboratory for the Physics and Chemistry of Nanodevices Department of Electronics,Peking University,Beijing 100871,China)

机构地区：[1]北京大学电子学院纳米器件物理和化学教育部重点实验室,北京100871

出　　处：《真空与低温》2022年第4期438-444,共7页Vacuum and Cryogenics

基　　金：国家重点研发计划(2017YFA0205003、2019YFA0210201);国家自然科学基金(11890671、11874068、62022007)。

摘　　要：微型电离真空传感器在微小空间和特殊范围的压力探测中有着非常重要的应用。然而,之前的微型电离真空传感器存在或体积大或工作电压高或能耗高等缺点。以新型氧化硅隧穿电子源为阴极制备了一种高压力微型电离真空传感器,该传感器结构紧凑、加工简单、体积微小,仅为15 mm×15 mm×2 mm(长×宽×高),工作电压低、探测量程宽、探测压力上限高。实验结果显示,传感器在3.50×10^(-2)~1.02×10^(2) Pa压力范围内具有很好的线性响应。研究为解决传统电离真空传感器和皮拉尼真空传感器在此压力范围内探测不准确的问题提供了一种可行的方案,有望推动电离真空传感器在更多重要领域应用。Miniaturized ionization vacuum sensors have very important applications in pressure detection in tiny space and special scope.However,the previous miniaturized ionization vacuum sensors still have shortcomings such as large size,high working voltage or high energy consumption.A new-type of high-pressure miniaturized ionization vacuum sensor is fabricated by using a new-type of SiO_(x)-based tunneling electron source as the cathode,which is compact in structure,easy in fabrication and miniature in size,only 15 mm×15 mm×2 mm(length×width×height),also has the advantages of low operating voltage,wide detection range,and high detection pressure upper limit.The experimental results show that it has a good linear response in the pressure range of 3.50×10^(-2)~1.02×10^(2) Pa.The research provides a feasible solution to the problem that the traditional ionization vacuum sensor and Pirani vacuum sensor are not accurate in the pressure ranges and is expected to promote the widespread applications of ionization vacuum sensors in more important fields.

关 键 词：电离真空传感器 氧化硅隧穿电子源 高压力 微型化 

分 类 号：TB772.3[一般工业技术—真空技术]