机构地区:[1]State Key Laboratory of Surface Physics and Department of Physics,Fudan University,Shanghai 200433,China [2]Institute for Nanoelectronic Devices and Quantum Computing,Fudan University,Shanghai 200433,China [3]College of Science,University of Shanghai for Science and Technology,Shanghai 200093,China [4]Laboratory for Computational Physical Sciences(MOE),Fudan University,Shanghai 200433,China [5]Solid State and Structural Chemistry Unit,Indian Institute of Science,Bangalore 560012,India [6]School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China [7]Department of Physics,University of Washington,Seattle,WA 98195-1560,USA [8]Department of Electronic Engineering,Royal Holloway University of London,Egham TW200EX,UK [9]Materials Engineering,The University of Queensland,Brisbane QLD 4072,Australia [10]Beijing Key Laboratory of Microstructure and Property of Advanced Materials,Institute of Microstructure and Property of Advanced Materials,Beijing University of Technology,Beijing 100124,China [11]The Ultramicroscopy Research Center,Kyushu University,Fukuoka 819-0395,Japan [12]State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,China [13]Collaborative Innovation Center of Advanced Microstructures,Nanjing 210093,China [14]Department of Applied Quantum Physics and Nuclear Engineering,Kyushu University,Fukuoka 819-0395,Japan [15]Centre for Microscopy and Microanalysis,The University of Queensland,Brisbane QLD 4072,Australia [16]Shanghai Research Center for Quantum Sciences,Shanghai 201315,China
出 处:《National Science Review》2022年第6期158-165,共8页国家科学评论(英文版)
基 金:supported by the National Key Research and Development Program of China (2017YFA0303302,2018YFA0305601, 2016YFA0300700 and 2017YFA0206304);the National Natural Science Foundation of China (11934005,61322407, 11874116, 11474059, 11674064, 61427812 and11774160);the Science and Technology Commission of Shanghai (19511120500);the Shanghai Municipal Science and Technology Major Project (2019SHZDZX01);the Program of Shanghai Academic/Technology Research Leader(20XD1400200);the Beijing Natural Science Foundation(Z180014);the National Basic Research Program of China(2014CB921101 and 2016YFA0300803);the UK EPSRC(EP/S010246/1);the Australian Research Council,the Progress100 program to encourage the UQ-KU collaboration;the Japanese Nanotechnology Platform Project for advanced nanostructure characterization (JPMXP09-A-19-KU-0312);support from the China Postdoctoral Innovative Talents Support Program (BX20190085);the China Postdoctoral Science Foundation (2019M661331);support from the China Postdoctoral Science Foundation (2020TQ0080 and 2020M681138);support from the startup grant (SG/MHRD-19–0001)of the Indian Institute of Science;the University of Washington is supported by the Department of Energy,Basic Energy Sciences,Materials Sciences and Engineering Division(DE-SC0018171)。
摘 要:Two-dimensional(2D)ferromagnetic materials have been discovered with tunable magnetism and orbital-driven nodal-line features.Controlling the 2D magnetism in exfoliated nanoflakes via electric/magnetic fields enables a boosted Curie temperature(T_(C))or phase transitions.One of the challenges,however,is the realization of high T_(C) 2D magnets that are tunable,robust and suitable for large scale fabrication.Here,we report molecular-beam epitaxy growth of wafer-scale Fe_(3+X)GeTe_(2) films with T_(C) above room temperature.By controlling the Fe composition in Fe_(3+X)GeTe_(2),a continuously modulated T_(C) in a broad range of 185–320 K has been achieved.This widely tunable TC is attributed to the doped interlayer Fe that provides a 40%enhancement around the optimal composition X=2.We further fabricated magnetic tunneling junction device arrays that exhibit clear tunneling signals.Our results show an effective and reliable approach,i.e.element doping,to producing robust and tunable ferromagnetism beyond room temperature in a large-scale 2D Fe_(3+X)GeTe_(2) fashion.
关 键 词:2D ferromagnetic material Fe_(3+X)GeTe_(2)film element doping above room temperature TC tunability
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