Tune the electronic structure of MoS_(2)homojunction for broadband photodetection  

作　　者：Rui Tao Xianlin Qu Zegao Wang Fang Li Lei Yang Jiheng Li Dan Wang Kun Zheng Mingdong Dong 

机构地区：[1]College of Materials Science and Engineering,Sichuan University,Chengdu 610065,China [2]Beijing Key Lab of Microstructure and Properties of Solids,Faculty of Materials and Manufacturing,Beijing University of Technology,Beijing 100124,China [3]State Key Laboratory for Advanced Metals&Materials,University of Science&Technology Beijing,Beijing 100083,China [4]State Key Laboratory of Organic-Inorganic Composites,Beijing University of Chemical Technology,Beijing 100029,China [5]Interdisciplinary Nanoscience Center,Aarhus University,Aarhus 8000,Denmark

出　　处：《Journal of Materials Science & Technology》2022年第24期61-68,共8页材料科学技术（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(No.52002254);the Sichuan Science and Technology Foundation(Nos.2020YJ0262,2021YFH0127);the Chunhui plan of Ministry of Education;the Fundamental Research Funds for the Central Universities(No.YJ201893);the Open-Foundation of Key Laboratory of Laser Device Technology;the China North Industries Group Corporation Limited(No.KLLDT202104);State Key Lab of Advanced Metals and Materials(No.2019-Z03)。

摘　　要：Due to the weak absorption and low light-matter interaction of MoS_(2),intrinsic MoS_(2)photodetector usually has low photoresponse,thus limiting its real application.Herein,MoS_(2)homojunction was constructed by using the chemical vapor deposition grown intrinsic MoS_(2)films and the Nb-doped MoS_(2)films.The results show that the Nb doping will induce p-type doping in MoS_(2),where the electron concentration will decrease by 2.08×10^(12)cm^(–2)after Nb doping.By investigating the photoelectric effect of MoS_(2)/Nb-doped MoS_(2)homojunction-based phototransistor,the tunability of the photoresponse,detectivity as the function of the external field,wavelength,and power of light have been studied in detail.The results show that the photoresponse and detectivity are strongly dependent on the gate voltage due to the external field tuned interlayer photoexcitation attributing to the band bending.The maximum of photoresponse can reach 51.4 A/W,the detectivity can reach 3.0×10^(12)Jones,which is two orders higher than that of intrinsic MoS_(2).Furthermore,by correlating the photoresponse and detectivity with the external field,it is found that the photodetection of MoS_(2)homojunction can be significantly tuned and exhibit well photodetection in infrared.This comprehensive work not only sheds light on the tunable photoexcitation mechanism but also offers a strategy to achieve a high-performance photodetector.

关 键 词：Molybdenum disulfide P-type doping HOMOJUNCTION PHOTORESPONSE TUNABILITY 

分 类 号：TN15[电子电信—物理电子学] O469[理学—凝聚态物理]