Nonvolatile resistive memory and synaptic learning using hybrid flexible memristor based on combustion synthesized Mn-ZnO  

作　　者：Qi Xue Tao Hang Jianghu Liang Chun-Chao Chen Yunwen Wu Huiqin Ling Ming Li 

机构地区：[1]State Key Laboratory of Metal Matrix Composites,School of Materials Science and Engineering Shanghai Jiao Tong University,Shanghai 200240,China

出　　处：《Journal of Materials Science & Technology》2022年第24期123-130,共8页材料科学技术（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(No.21972091);the Basic Research Project of Science and Technology of Shanghai(No.20JC1415100)。

摘　　要：Memristors have been seen as promising candidates for next-generation nonvolatile memory and neuromorphic computing.Solution-processed memristors can offer many advantages,such as low-cost fabrication,large-area uniformity,and high versatility.However,the high annealing temperature of the solution process and unsatisfactory performance are impeding the advancement of flexible memristors.In this work,the combustion method was proposed to fabricate the Mn-ZnO-based memristor without a hightemperature process on the flexible substrate.The device demonstrates stable bipolar resistive switching behavior with ultralow switching voltage(-0.6 V/0.71 V),high on/off ratio(>2×10~3),multilevel storage capability,and uniform resistance distribution(σ/μ=18%/16%).The flexible device with a bend radius of 10 mm shows no obvious performance degeneration compared with the device in the flat state.Furthermore,tunable repetitively synaptic weight was achieved by the memristor.Synaptic plasticity functions,such as excitatory postsynaptic current,paired-pulse facilitation,and learning/forgetting behaviors,have been emulated.This work provides a simple and feasible strategy for fabricating the flexible highperformance memristor,with the expectation to facilitate the development of flexible electronics.

关 键 词：MEMRISTOR FLEXIBLE Combustion synthesis Synaptic plasticity Mn-ZnO 

分 类 号：TB33[一般工业技术—材料科学与工程] TN03[电子电信—物理电子学]