低维半导体器件电阻率的测试理论与实验研究  

Theoretical analysis and experimental research on the resistivity of low-dimensional semiconductor devices

作　　者：甄聪棉[1,2] 潘成福[1,2] 侯登录[1,2] 庞兆广[1,2] 李玉现[1,2] ZHEN Cong-mian;PAN Cheng-fu;HOU Deng-lu;PANG Zhao-guang;LI Yu-xian(College of Physics,Hebei Normal University,Shijiazhuang 050024,China;Hebei Advanced Thin Films Key Laboratory,Hebei Normal University,Shijiazhuang 050024,China)

机构地区：[1]河北师范大学物理学院,河北石家庄050024 [2]河北师范大学河北省新型薄膜材料重点实验室,河北石家庄050024

出　　处：《物理实验》2022年第7期22-28,共7页Physics Experimentation

摘　　要：针对二维和三维半导体器件的电阻率测试进行了详细的理论分析和实验研究.阐述了常规四探针法、改进的四探针法以及两探针法的使用范围,重点讨论了范德堡方法在低维半导体材料电阻率测试中的应用.以NiCo_(2)O_(4)外延薄膜为例,具体分析了材料的导电机理.The detailed theoretical analysis and experimental research on the resistivity measurement for two-dimensional and three-dimensional semiconductor devices were carried out.The conventional four-probe method,the improved four-probe method and the two-probe method were introduced,and the application scope of each method was described.In addition,the application of van der Pauw method in the resistivity measurement for low-dimensional semiconductor materials was emphatically discussed.Finally,taking NiCo_(2)O_(4) epitaxial film as an example,the conductive mechanism of the film was analyzed in detail.

关 键 词：电阻率 四探针法 范德堡法 半导体材料 

分 类 号：O441[理学—电磁学] TM934.1[理学—物理]