基于热效应的长脉冲激光对硅基PIN恢复时间影响的研究  

Research on Recovery Time Influence of Millisecond Pulse Laser to Silicon PIN Based on Thermal Effect

作　　者：李辛垒 魏智[1] 高乐 金光勇[1] LI Xinlei;WEI Zhi;GAO Le;JIN Guangyong(School of Science,Changchun University of Science and Technology,Changchun 130022)

机构地区：[1]长春理工大学物理学院,长春130022

出　　处：《长春理工大学学报（自然科学版）》2022年第3期21-27,共7页Journal of Changchun University of Science and Technology(Natural Science Edition)

基　　金：吉林省教育厅科学技术项目(JJKH20200731KJ)。

摘　　要：研究了长脉冲激光对硅基PIN光电探测器输出信号的恢复时间影响机制,基于热效应,建立了长脉冲激光对硅基PIN光电探测器恢复时间的模型。实验测量了不同偏压、脉宽和能量密度下硅基PIN探测器的恢复时间,得到了恢复时间的变化规律。结果表明:偏置电压对恢复时间几乎没有影响,而脉宽和能量密度对其影响较大。这主要是因为脉宽和能量密度引起的温度变化比较显著,而温度影响非平衡载流子寿命,从而导致其恢复时间的变化。In order to study the influencing mechanism of millisecond pulsed laser on the recovery time of the output signal of silicon-based PIN photodetector,the recovery time model of silicon-based PIN photodetector by millisecond pulsed laser was established based on thermal effect. The recovery time of silicon-based PIN photodetector under different bias voltage,pulse width,and energy density was experimentally measured. The change rule of recovery time was obtained. The results showed that the bias voltage had little effect on the recovery time,however,the pulse width and energy density had a great effect on the recovery time. So,the temperature changes caused by the pulse width and energy density are relatively obvious.The temperature affected the life of the non-equilibrium carrier and resulted in a change in its recovery time.

关 键 词：长脉冲激光 硅基PIN光电探测器 恢复时间 

分 类 号：TN249[电子电信—物理电子学]