Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs  

作　　者：Yinhe WU Jincheng ZHANG Shenglei ZHAO Zhaoxi WU Zhongxu WANG Bo MEI Chao DUAN Dujun ZHAO Weihang ZHANG Zhihong LIU Yue HAO 

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductors and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China [2]China Aerospace Components Engineering Center,Beijing 100094,China

出　　处：《Science China(Information Sciences)》2022年第8期250-256,共7页中国科学（信息科学）（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.62074122);Key-Area Research and Development Program of Guangdong Province(Grant No.2020B010174001);National Key Science and Technology Special Project(Grant No.2019ZX01001101-010)。

摘　　要：In this study,we investigate heavy ion irradiation effects on commercial 650 V p-GaN normallyoff HEMTs.Ge and Cl ions are used to irradiate the GaN devices in the experiments.Ge and Cl ion beam irradiation have little impact on the output characteristics of GaN devices.After heavy ion irradiation,the leakage currents between source and drain electrodes increase significantly under off-state,decreasing the breakdown voltage(BVDS)sharply.Additionally,Ge and Cl ion irradiation have little effect on the trap states under the gate electrode;thus,the gate leakage currents increase slightly.Many line-shaped crystal defects extending from the surface to the GaN buffer layer can be captured using a transmission electron microscope after Ge/Cl ion irradiation.The buffer layers of the irradiated devices were damaged,and the leakage path was generated in the buffer layer.Defect percolation process in buffer layer is the dominant factor of irradiated high-voltage GaN device failure.

关 键 词：heavy ions irradiation p-GaN normally-off HEMTs line-shaped crystal defects leakage path defect percolation process 

分 类 号：TN386[电子电信—物理电子学]