Single event transients induced by pulse laser in Ge pMOSFETs and its supply voltage dependence  

作　　者：Jingyi LIU Xia AN Gensong LI Zhexuan REN Ming LI Xing ZHANG Ru HUANG 

机构地区：[1]Institute of Microelectronics,Peking University,Beijing 100871,China

出　　处：《Science China(Information Sciences)》2022年第8期291-292,共2页中国科学（信息科学）（英文版）

基　　金：supported by National Natural Science Foundation of China (Grant Nos. 61421005, 61927901, 61434007);111 Project (Grant No. B18001)。

摘　　要：Dear editor,Germanium(Ge) has been considered as a promising candidate of channel material for sub-7 nm owing to its high carrier mobility and good compatibility with conventional Si CMOS process [1]. Although Ge-based technology is still under development and not in massive production, it is quite meaningful to explore its single event effect(SEE) before potential space applications.

关 键 词：meaningful EDITOR MASSIVE 

分 类 号：TN249[电子电信—物理电子学]