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作 者:刘红奎 Liu Hongkui(Southwest China Institute of Electronic Technology,Chengdu 610036,China)
机构地区:[1]中国西南电子技术研究所,四川成都610036
出 处:《电子技术应用》2022年第8期127-130,共4页Application of Electronic Technique
摘 要:研究了基于电压比较器的固态功率控制器驱动保护技术原理,设计了降栅压保护电路。通过设置降栅压保护电路的输出电压值和电压上升/下降的速度,实现了对MOSFET栅极电压的控制和对负载在过流或短路时的及时保护功能。解决了现有技术中使用稳压二极管判断过流门限电压,导致对MOSFET栅极电压的控制精度不高和受保护MOSFET在一个时延内反复开通/关断的问题。经过电路分析和仿真实验,结果表明降栅压保护电路可以在45μs内对短路负载进行关断保护。This paper analyzed the principle of driver protection technology of solid state power controller based on voltage comparator,and the protection circuit of decreasing gate-voltage was designed.The protection circuit of decreasing gate-voltage by setting output voltage value and voltage rise/fall speed,realized the MOSFET gate voltage control,and the load in over-current or short-circuit protection function.The proposed method solved the existing problem using voltage regulator diode to judge the over-current threshold voltage,which lead to the control precision of MOSFET gate voltage is not high and protected MOSFET repeatedly open/close within a time delay.The analysis and simulation on the circuit has been made,and the results show that the protection circuit of decreasing gate-voltage can protect short-circuit load within 45μs.
分 类 号:TN386[电子电信—物理电子学] TM133[电气工程—电工理论与新技术]
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