"Clean"doping to advance 2D material phototransistors  

作　　者：Zhen Wang Peng Wang Weida Hu 

机构地区：[1]State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,200083,Shanghai,China

出　　处：《Light(Science & Applications)》2022年第7期1322-1323,共2页光（科学与应用)（英文版）

摘　　要：Doping is an essential element to develop next-generation electronic and optoelectronic devices and has to break the limit of specific steps during material synthesis and device fabrication.Here the authors reveal“clean”doping to enhance the electric and photoelectric performance of two-dimensional(2D)indium selenide(InSe)via a neutron-transmutation method for the first time,even after device fabrication.

关 键 词：OPTOELECTRONIC DOPING CLEAN 

分 类 号：TN32[电子电信—物理电子学]