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作 者:Ming XU Yi WANG Chun LIU Xinyang SI Rongrong GAO Wei LUO Guanghui QU Wanli JIA Qian LIU 徐鸣;王毅;刘春;司鑫阳;高荣荣;罗伟;屈光辉;贾婉丽;刘骞(Applied Physics Department,Xi'an University of Technology,Xi'an 710048,People's Republic of China)
机构地区:[1]Applied Physics Department,Xi'an University of Technology,Xi'an 710048,People's Republic of China
出 处:《Plasma Science and Technology》2022年第7期187-193,共7页等离子体科学和技术(英文版)
基 金:supported in part by National Natural Science Foundation of China(Nos.51877177 and 52007152);in part by the Scientific Research Program Funded by Shaanxi Provincial Education Department(Nos.21JP085 and 21JP088);the Youth Innovation Team of Shaanxi Universities;in part by the Natural Science Basic Research Plan of Shaanxi Province(Nos.2021JZ-48 and 2020JM-462);in part by Fellowship of China Postdoctoral Science Foundation(No.2021M702639);in part by Open Research Fund of State Key Laboratory of Pulsed Power Laser Technology(No.SKL2020KF01)。
摘 要:In this article,the bunched transport of photoexcited carriers in a GaAs photoconductive semiconductor switch(PCSS)with interdigitated electrodes is investigated under femtosecond laser excitation.Continuous outputs featuring high gain are obtained for single shots and at 1 kHz by varying the optical excitation energy.An ensemble three-valley Monte Carlo simulation is utilized to investigate the transient characteristics and the dynamic process of photoexcited carriers.It demonstrates that the presence of a plasma channel can be attributed to the bunching of high-density electron–hole pairs,which are transported in the form of a highdensity filamentary current.The results provide a picture of the evolution of photoexcited carriers during transient switching.A photoinduced heat effect is analyzed,which reveals the related failure mechanism of GaAs PCSS at various repetition rates.
关 键 词:GaAs PCSS high gain(HG) plasma channel filamentary current heat effect
分 类 号:TM564[电气工程—电器] TN36[电子电信—物理电子学]
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