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作 者:余晨辉[1] 沈倪明 周勇[2] 成田恬 秦嘉怡 罗曼 Yu Chenhui;Shen Niming;Zhou Yong;Cheng Tiantian;Qin Jiayi;Luo Man(Jiangsu Key Laboratory of ASIC Design,School of Information Science and Technology,Nantong University,Nantong 226019,China;State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)
机构地区:[1]南通大学信息科学技术学院江苏省专用集成电路设计重点实验室,江苏南通226019 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083
出 处:《红外与激光工程》2022年第7期49-58,共10页Infrared and Laser Engineering
基 金:国家自然科学基金(62074085,62104118);南通市科技项目(JC2021031);上海市扬帆计划项目(21 YF1454800)。
摘 要:光电探测器在通讯、环境、健康和国防等日常生活及国家安全等领域中应用广泛。随着时代的发展,对光电探测器在灵敏度、响应速度及波长范围等方面的性能要求与日俱增。低维材料独特的电学及光电特性使其在光电子器件领域具有重要的应用前景。为了充分利用低维材料的优势,克服其暗电流大、吸收率低的不足,研究人员提出将铁电材料与低维材料结合,利用铁电材料的剩余极化作用形成强局域场调控载流子浓度以提高低维材料的光电探测能力。文中总结了近年来铁电局域场增强低维材料光电探测器的研究成果,介绍了铁电材料对一维纳米线、二维材料以及低维结型器件的调控和性能提升方面的相关研究。最后,对铁电局域场增强低维材料光电探测器的发展趋势进行了简要的总结和展望。Photodetectors are widely used in daily life and national security,including communication,the environment,health and national defense.With the development of time,the performance requirements of photodetectors in terms of sensitivity,response speed and wavelength range have been increasing.The unique electrical and optoelectronic properties of low-dimensional materials make them an essential application prospect in the field of optoelectronic devices.To make full use of the advantages of low-dimensional materials and overcome the shortcomings of high dark current and low absorption rate,researchers have combined ferroelectric materials with low-dimensional materials and used the remnant polarization of ferroelectric materials to form a strong localized field to modulate carriers,which improves the photodetection capability of low-dimensional materials.Recent research results of ferroelectric localized field-enhanced low-dimensional material-based photodetectors are summarized in this paper.Meanwhile,related research on the modulation and performance enhancement of ferroelectric materials in one-dimensional nanowires,two-dimensional materials and junction devices was introduced.Finally,the development trend of ferroelectric localized field-enhanced low-dimensional material-based photodetectors was briefly summarized and proposed.
分 类 号:TN15[电子电信—物理电子学]
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