复合激光损伤CMOS图像传感器实验研究  

Experimental study on a CMOS image sensor damaged by a composite laser

作　　者：朱孟真 刘云 米朝伟 魏靖松 陈霞 田方涛 冯苏茂 王赛 Zhu Mengzhen;Liu Yun;Mi Chaowei;Wei Jingsong;Chen Xia;Tian Fangtao;Feng Sumao;Wang Sai(Ordnance NCO Academy,Army Engineering University of PLA,Wuhan 430075,China)

机构地区：[1]陆军工程大学军械士官学校,湖北武汉430075

出　　处：《红外与激光工程》2022年第7期217-223,共7页Infrared and Laser Engineering

基　　金：国防预研基金(30102050101);国防科研重点项目(KYWHJWJK1702)。

摘　　要：激光是对抗光电侦察的有效方式。为了提高损伤效能,探索了复合激光损伤光电探测器的新思路。分别开展了波长1 064 nm和532 nm、脉宽10 ns的激光及其双波长复合激光,以及波长1 064 nm、脉宽0.4 ms和10 ns激光及其双脉宽复合激光对CMOS图像传感器的损伤效能实验。结果表明,双波长复合激光对CMOS造成严重损伤时的基频光能量是单独1 064 nm激光的77.8%,是单独532 nm激光的62.5%;双脉宽复合激光损伤时,脉宽0.4 ms激光的能量密度降低为单独作用时的1.7%,脉宽10 ns激光的能量密度降低为单独作用时的76.4%。这一发现为多制式复合激光高效光电对抗提供了新的思路和参考。Lasers are an effective way to counter photoelectric reconnaissance.To improve the damage efficiency,a new idea of a composite laser damage photodetector is explored.Damage efficiency experiments of a 1 064 nm and 532 nm laser with a 10 ns pulse widths and its dual wavelength composite laser,1 064 nm laser with 0.4 ms and 10 ns pulse width and its dual pulse width composite laser on a CMOS image sensor were carried out respectively.The results show that when the dual-wavelength composite laser causes complete damage to the CMOS,the fundamental frequency light energy is 77.8% of the 1 064 nm laser alone and 62.5% of the 532 nm laser alone;when the dual-pulse composite laser damages,the pulse width of the 0.4 ms laser is The energy density is reduced to 1.7% of the single action,and the energy density of the 10 ns pulse width laser is reduced to76.4% of the single action.This discovery provides a new idea and reference for high efficiency optoelectronic countermeasures of multisystem composite lasers.

关 键 词：光电对抗 复合激光 损伤效能 对比实验 

分 类 号：TN248.1[电子电信—物理电子学]