用于非制冷红外探测器片上存储器的低延迟灵敏放大器设计  

Design of a low delay sensitive amplifier for the on-chip memory of an uncooled infrared detector

作　　者：陈力颖[1,2] 高竹梅 赵军发 王慧雯[1,2] 张博超 李勇 CHEN Liying;GAO Zhumei;ZHAO Junfa;WANG Huiwen;ZHANG Bochao;LI Yong(School of Electronics and Information Engineering,TianGong University,Tianjin 300387,China;Tianjin Key Laboratory of Photoelectric Detection Technology and System,Tianjin 300387,China;Taizhou National Crytal Technology Co.,Ltd,Taizhou,Zhejiang 318014,China)

机构地区：[1]天津工业大学电子与信息工程学院,天津300387 [2]天津市光电检测技术与系统重点实验室,天津300387 [3]台州国晶智芯科技有限公司,浙江台州318014

出　　处：《光电子．激光》2022年第6期585-590,共6页Journal of Optoelectronics·Laser

基　　金：天津市科技计划项目(18ZXCLGX0090);天津市自然科学基金(18JCYBJC85400)资助项目。

摘　　要：针对非制冷红外探测器片上存储器的高速数据读出,设计了一种用于非制冷红外探测器片上存储器的低延迟灵敏放大器。随着非制冷红外探测器像素阵列的不断加大,对非制冷红外探测器片上存储器的要求也更高,需要一个更高速的存储器进行红外探测器内部数据存储。通过降低灵敏放大器延迟时间是提高数据传输速度的一种可靠方法。本文对传统交叉耦合结构灵敏放大器进行改进,与传统交叉耦合结构灵敏放大器相比,增加了完全互补型的第二级交叉放大电路,并采用NMOS组成的中间阶段进行两级运放的耦合。改进后的新型灵敏放大器能快速有效地放大位线上电压差,同时改善灵敏度低的问题。本论文设计的灵敏放大器采用TSMC 65 nm工艺,在工作电压为5 V、位线电压差为100 mV条件下,仿真结果表明:数据读出延迟仅为25.19 ps,与交叉耦合式灵敏放大器相比,读出延迟降低了37.07%。同时,在全工艺角仿真条件下,环境温度为-45—125℃,新型灵敏放大器延迟仿真最大值仅为39 ps,最小值为17.1 ps。Aiming at the high-speed data readout from the on-chip memory of the uncooled infrared detector,a low-latency sensitive amplifier for the on-chip memory of the uncooled infrared detector is designed.As the pixel array of uncooled infrared detectors continues to increase,the requirements for the on-chip memory of uncooled infrared detectors are also higher,and a higher-speed memory is needed for the internal data storage of the infrared detector.Reducing the delay time of the sensitive amplifier is a reliable method to increase the data transmission speed.In this paper,the traditional cross-coupling structure of the sensitive amplifier is improved.Compared with the traditional cross-coupling structure of the sensitive amplifier,a completely complementary second-stage cross amplifying circuit is added,and an intermediate stage composed of NMOS is used to couple the two-stage operational amplifier.The improved new sensitive amplifier can quickly and effectively amplify the voltage difference on the bit line,and at the same time improve the problem of low sensitivity.The sensitive amplifier designed in this paper uses TSMC 65 nm process.Under the conditions of 5 V working voltage and 100 mV bit line voltage difference,the simulation results show that the data readout delay is only 25.19 ps.Compared with the cross-coupled sensitive amplifier,the readout delay is reduced by 37.07%.At the sametime,under the simulation conditions of the full process angle,the ambient temperature is-45℃to 125℃,the delay simulation maximum value of the new sensitive amplifier is only 39 ps,and the minimum value is 17.1 ps.

关 键 词：红外探测器 灵敏放大器 交叉耦合 电压模型 

分 类 号：TN432[电子电信—微电子学与固体电子学]