机构地区:[1]Centre for Molecular Systems and Organic Devices(CMSOD),State Key Laboratory of Organic Electronis and Information Displays&Institute of Advanced Materials(AM),Nanjing University of Posts.Telecommunications,9 Wenyuan Road,Narnjing 210023,China [2]National Symnchrotron Radiationr Laboratory,Anhui Provincial Engincering Laboratory of Advanced Functional Polymer Film,CAS Key Laboratory of Soft Matter Chemistry,University of Science and Technology of China,Hgfei 230026,China [3]School of Plysics,State Key Laboratory of Crystal Materials,Shandong University,Jinan,Shardong 250100,China [4]Beijing National Laboratony for Molecular Scences,National Biomedical Imaging Center,College of Chemistry and Molecular Engineering,Peking University,Bejing 100871,China [5]Frontiers Science Center for Flexible Electronics(FSCFE),MIIT Key Laboratory of Flexible Electronics(KLoFE),Northwestern Polytechnical Untiversity,Xian 710072,China [6]State Key Laboratory of Supramolecular Structure and Materias,College of Chemisty,jilin University,2699 Qianjin Avenue,Changchun 130012,China
出 处:《Research》2022年第2期111-122,共12页研究(英文)
基 金:supported by the National Natural Science Foundation of China(21774061,22071112,and 61935017);National Key Laboratory(2009DS690095);Natural Science Foundation Major Research Program Integration Project(Grant Number 91833306);Natural Science Fund for Colleges and Universities in Jiangsu Province(20KJB150038);and Open Project from State Key Laboratory of Supramolecular Structure and Materials at jilin University(No.sklssm202014 and sklssm202108).
摘 要:High dielectric constants in organic semiconductors have been identified as a central challenge for the improvement in not only piexoelectric,preolecric,and freeltric efcts but also photoclecric conversion eficiency in OPVs,carrier mobility in OFETS,and charge density in charge-trapping memories.Herein,we report an ultralong persistence length(≈41 nm)efet of spiro-fused organic nanopolymers on dielectric properties,together with excitonic and charge carrier behaviors.The state-of-the-art nanopolymers,namely,nanopolyspirogrids(NPSGs),are synthesized via the simple crossscale Friedel-Crafts polygridlization of AjB-type nanomonomers.The high dielectric constant(k=8.43)of NPSG is firstly achieved by locking spiro-polygridization efect that results in the enhancement of dipole polarization.When doping into a polystyrene-based dielectric layer,such a high-k feature of NPSG increases the feld-ffct carrier mobility from 0.20 to 0.90cm^(2)Vl s'in pentacene OFET devices.Meanwhile,amorphous NPSG film exhibits an ultralow energy disorder(<50 meV)for an exellent zero-field hole mobility of 3.94×10^(-1)cm^(2)V^(-1)s^(-1).surpassing most of the amorphousπconjugated polymers Onganic nanopolymers with high dielectric constants open a new way to break through the bottleneck of eficiency and multifunctionality in the blueprint of the fourth generation semiconductors.
关 键 词:dielectric CHARGE AMORPHOUS
分 类 号:TN3[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]
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