SnO_(2)对低温烧结ZnBiMnNbO基高压压敏陶瓷的影响  

Effect of SnO_(2) on the Low-temperature Sintered ZnBiMnNbO BasedVaristor Ceramics for High-voltage Application

作　　者：宋欢欢 赵鸣[1] 崔文正 刘卓承[1] 陈华[2] 杜永胜[2] SONG Huanhuan;ZHAO Ming;CUI Wenzheng;LIU Zhuocheng;CHEN Hua;DU Yongsheng(Key Laboratory of Integrated Exploitation of Bayan Obo Multi-Metal Resources,Inner Mongolia University of Science and Technology,Baotou 014010,Inner Mongolia,China;School of Science,Inner Mongolia University of Science and Technology,Baotou 014010,Inner Mongolia,China)

机构地区：[1]内蒙古科技大学白云鄂博矿多金属资源综合利用重点实验室,内蒙古包头014010 [2]内蒙古科技大学理学院,内蒙古包头014010

出　　处：《材料导报》2022年第17期66-70,共5页Materials Reports

基　　金：内蒙古自然科学基金(2020MS05037)。

摘　　要：采用传统固相烧结工艺,在875℃低温保温3 h条件下制备了0%~0.75%(摩尔分数)SnO_(2)掺杂ZnBiMnNbO基压敏陶瓷。采用高精度分析天平、XRD、SEM、EDS及高精度源表等研究了SnO_(2)含量变化对所制备材料显微结构及电学特性的影响。结果表明:在所研究范围内,SnO_(2)含量升高增大了材料的相对密度,并促进含铌Bi_(2)Sn_(2)O_(7)焦绿石新相的形成。因此,材料的平均晶粒直径由4.38μm减小至4.04μm,压敏电压由727 V/mm升高到1024.37 V/mm,非线性系数由32.37提升至52.64,漏电流密度由13.5μA/cm^(2)降低至1.55μA/cm^(2)。研究结果可为低成本、高非线性、高压压敏陶瓷的研制提供借鉴。0%—0.75%(mole fraction)SnO_(2) doped ZnBiMnNbO based varistor ceramics were produced by the traditional solid-state sintering procedure at low temperature of 875℃for 3 h.The effect of SnO_(2) concentration variation on the microstructure and properties of the fabricated material was investigated by high precision scale,XRD,SEM,EDS and high-precision power-source unit.The result shows that the increment of SnO_(2) within the studied range can effectively improve the relative density and the formation of the Nb-containing Bi_(2)Sn_(2)O_(7) pyrochlore as the new secondary phase.The latter microstructural change leads the average grain size to decrease from 4.38μm to 4.04μm,and the breakdown voltage to increase from 727 V/mm to 1024.37 V/mm.Meanwhile,the nonlinear coefficient increases from 32.37 to 52.64,and the leakage current density decreases from 13.5μA/cm^(2) to 1.55μA/cm^(2).The results of this study can provide a good reference to the development of high-voltage varistors with high nonlinearity at low cost.

关 键 词：ZnBiMnNbO 基压敏陶瓷 SnO_(2) 低温烧结 高压 

分 类 号：TN304.93[电子电信—物理电子学] TN379