Stationary and Transient Simulations for a One-Dimensional Resonant Tunneling Diode  

作　　者：Xin Hu Shaoqiang Tang Maxime Leroux 

机构地区：[1]CAPT,College of Engineering,Peking University,Beijing 100871,China [2]Applied and ComputationalMathematics,California Institute of Technology,Pasadena,CA 91125,USA [3]Department of Physics,ENS de Lyon,69364 Lyon cedex 07,France

出　　处：《Communications in Computational Physics》2008年第10期1034-1050,共17页计算物理通讯（英文）

基　　金：This research is partially supported by NSFC under grant No.90407021;National Basic Research Pro-gram of China under contract number 2007CB814800;the China Ministry of Educa-tion under contract number NCET-06-0011.

摘　　要：We investigate the validity of stationary simulations for semiconductor quantum charge transport in a one-dimensional resonant tunneling diode via fluid type models.Careful numerical investigations to a quantum hydrodynamic model reveal that the transient simulations do not always converge to the steady states.In particular,growing oscillations are observed at relatively large applied voltage.A dynamical bifurcation is responsible for the stability interchange of the steady state.Transient and stationary computations are also performed for a unipolar quantum drift-diffusion model.

关 键 词：Quantum effects charge transport DISSIPATION transient/stationary computation 

分 类 号：O17[理学—数学]