Fundamental study towards a better understanding of low pressure radio-frequency plasmas for industrial applications  

作　　者：Yong-Xin Liu Quan-Zhi Zhang Kai Zhao Yu-Ru Zhang Fei Gao Yuan-Hong Song You-Nian Wang 刘永新;张权治;赵凯;张钰如;高飞;宋远红;王友年(Key Laboratory of Materials Modification by Laser,Ion,and Electron Beams(Ministry of Education),School of Physics,Dalian University of Technology,Dalian 116024,China)

机构地区：[1]Key Laboratory of Materials Modification by Laser,Ion,and Electron Beams(Ministry of Education),School of Physics,Dalian University of Technology,Dalian 116024,China

出　　处：《Chinese Physics B》2022年第8期14-36,共23页中国物理B（英文版）

基　　金：financially supported by the National Natural Science Foundation of China (Grant Nos. 11935005 and 11875100)。

摘　　要：Two classic radio-frequency(RF) plasmas, i.e., the capacitively and the inductively coupled plasmas(CCP and ICP),are widely employed in material processing, e.g., etching and thin film deposition, etc. Since RF plasmas are usually operated in particular circumstances, e.g., low pressures(m Torr-Torr), high-frequency electric field(13.56 MHz-200 MHz),reactive feedstock gases, diverse reactor configurations, etc., a variety of physical phenomena, e.g., electron resonance heating, discharge mode transitions, striated structures, standing wave effects, etc., arise. These physical effects could significantly influence plasma-based material processing. Therefore, understanding the fundamental processes of RF plasma is not only of fundamental interest, but also of practical significance for the improvement of the performance of the plasma sources. In this article, we review the major progresses that have been achieved in the fundamental study on the RF plasmas,and the topics include 1) electron heating mechanism, 2) plasma operation mode, 3) pulse modulated plasma, and 4) electromagnetic effects. These topics cover the typical issues in RF plasma field, ranging from fundamental to application.

关 键 词：RF plasma electron heating discharge mode pulse modulation electromagnetic effects 

分 类 号：O53[理学—等离子体物理]