Monolayer MoS_(2)of high mobility grown on SiO_(2)substrate by two-step chemical vapor deposition  

作　　者：Jia-Jun Ma Kang Wu Zhen-Yu Wang Rui-Song Ma Li-Hong Bao Qing Dai Jin-Dong Ren Hong-Jun Gao 马佳俊;吴康;王振宇;马瑞松;鲍丽宏;戴庆;任金东;高鸿钧(Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;School of Physical Sciences,University of Chinese Academy of Sciences,Chinese Academy of Sciences,Beijing 100190,China;CAS Key Laboratory of Nanophotonic Materials and Devices,CAS Key Laboratory of Standardization and Measurement for Nano-technology,National Center for Nanoscience and Technology,Beijing 100190,China;CAS Center for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing 100190,China)

机构地区：[1]Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [2]School of Physical Sciences,University of Chinese Academy of Sciences,Chinese Academy of Sciences,Beijing 100190,China [3]CAS Key Laboratory of Nanophotonic Materials and Devices,CAS Key Laboratory of Standardization and Measurement for Nano-technology,National Center for Nanoscience and Technology,Beijing 100190,China [4]CAS Center for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing 100190,China

出　　处：《Chinese Physics B》2022年第8期183-189,共7页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.61888102);the National Natural Science Foundation of China(Grant No.12004417);the National Key Research and Development Program of China(Grant Nos.2018YFA0305800 and 2019YFA0308500);the National Natural Science Foundation of China(Grant No.U2032206);Chinese Academy of Sciences(Grant Nos.XDB36000000,YSBR-003,and 112111KYSB20160061);Strategic Priority Research Program of Chinese Academy of Sciences(CAS)(Grant Nos.XDB30000000 and XDB28000000);Youth Innovation Promotion Association of CAS(Grant No.Y201902);CAS Project for Young Scientists in Basic Research(Grant No.YSBR-003)。

摘　　要：We report a novel two-step ambient pressure chemical vapor deposition(CVD)pathway to grow high-quality Mo S_(2)monolayer on the Si O_(2)substrate with large crystal size up to 110μm.The large specific surface area of the pre-synthesized Mo O_(3)flakes on the mica substrate compared to Mo O_(3)powder could dramatically reduce the consumption of the Mo source.The electronic information inferred from the four-probe scanning tunneling microscope(4P-STM)image explains the threshold voltage variations and the n-type behavior observed in the two-terminal transport measurements.Furthermore,the direct van der Pauw transport also confirms its relatively high carrier mobility.Our study provides a reliable method to synthesize high-quality Mo S_(2)monolayer,which is confirmed by the direct 4P-STM measurement results.Such methodology is a key step toward the large-scale growth of transition metal dichalcogenides(TMDs)on the Si O_(2)substrate and is essential to further development of the TMDs-related integrated devices.

关 键 词：chemical vapor deposition(CVD) scanning tunneling microscope(STM) MoS_(2) transport 

分 类 号：TQ136.12[化学工程—无机化工]