Modulation of Schottky barrier in XSi_(2)N_(4)/graphene(X=Mo and W)heterojunctions by biaxial strain  

作　　者：Qian Liang Xiang-Yan Luo Yi-Xin Wang Yong-Chao Liang Quan Xie 梁前;罗祥燕;王熠欣;梁永超;谢泉(College of Big Data and Information Engineering,Institute of New Optoelectronic Materials and Technology,Guizhou University,Guiyang 550025,China)

机构地区：[1]College of Big Data and Information Engineering,Institute of New Optoelectronic Materials and Technology,Guizhou University,Guiyang 550025,China

出　　处：《Chinese Physics B》2022年第8期578-586,共9页中国物理B（英文版）

基　　金：Project supported by the Industry and Education Combination Innovation Platform of Intelligent Manufacturing and Graduate Joint Training Base at Guizhou University,China(Grant No.2020-52000083-01-324061);the National Natural Science Foundation of China(Grant No.61264004);the High-level Creative Talent Training Program in Guizhou Province,China(Grant No.[2015]4015)。

摘　　要：Reducing the Schottky barrier height(SBH)and even achieving the transition from Schottky contacts to Ohmic contacts are key challenges of achieving high energy efficiency and high-performance power devices.In this paper,the modulation effects of biaxial strain on the electronic properties and Schottky barrier of Mo Si_(2)N_(4)(MSN)/graphene and WSi_(2)N_(4)(WSN)/graphene heterojunctions are examined by using first principles calculations.After the construction of heterojunctions,the electronic structures of MSN,WSN,and graphene are well preserved.Herein,we show that by applying suitable external strain to a heterojunction stacked by MSN or WSN—an emerging two-dimensional(2D)semiconductor family with excellent mechanical properties—and graphene,the heterojunction can be transformed from Schottky ptype contacts into n-type contacts,even highly efficient Ohmic contacts,making it of critical importance to unleash the tremendous potentials of graphene-based van der Waals(vd W)heterojunctions.Not only are these findings invaluable for designing high-performance graphene-based electronic devices,but also they provide an effective route to realizing dynamic switching either between n-type and p-type Schottky contacts,or between Schottky contacts and Ohmic contacts.

关 键 词：MoSi_(2)N_(4) Schottky barrier height HETEROJUNCTION biaxial strain 

分 类 号：TQ127.11[化学工程—无机化工] O469[理学—凝聚态物理]