Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases  

作　　者：Tianyuan Song Dongli Zhang Mingxiang Wang Qi Shan 宋天源;张冬利;王明湘;单奇(School of Electronic and Information Engineering,Soochow University,Suzhou 215006,China;Visionox Technology Co.,Ltd,Suzhou 215006,China)

机构地区：[1]School of Electronic and Information Engineering,Soochow University,Suzhou 215006,China [2]Visionox Technology Co.,Ltd,Suzhou 215006,China

出　　处：《Chinese Physics B》2022年第8期651-655,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61971299 and 61974101);the Natural Science Foundation of Jiangsu Province of China(Grant No.BK20201201);the Fund from Suzhou Science and Technology Bureau(Grant No.SYG201933);the Fund from the State Key Laboratory of ASIC and System,Fudan University,(Grant No.2021KF005)。

摘　　要：Degradation of a-InGaZnO thin-film transistors working under simultaneous DC gate and drain bias stress is investigated,and the corresponding degradation mechanism is proposed and verified.The maximum degradation occurs under the bias stress condition that makes the electric field and electron concentration relatively high at the same time.Trapping of hot electrons in the etching-stop layer under the extended drain electrode is proven to be the underlying mechanism.The observed degradation phenomena,including distortion in the transfer curve on a logarithmic scale and two-slope dependence on gate bias on a linear scale,current crowding in the output curve,and smaller degradation in transfer curves measured under large drain bias,can all be well explained with the proposed degradation mechanism.

关 键 词：a-IGZO thin-film transistors hot-carrier effects 

分 类 号：TN321.5[电子电信—物理电子学]