多孔硅掺杂的光学薄膜制备及发光性能分析  

Preparation and Luminescence Properties of Porous Silicon Doped Optical Thin Films

作　　者：兰慧琴[1] LAN Huiqin(School of mechanical and intelligent manufacturing,Fujian Chuanzheng Communications College,Fuzhou 350007,China)

机构地区：[1]福建船政交通职业学院机械与智能制造学院,福建福州350007

出　　处：《兰州工业学院学报》2022年第4期38-42,共5页Journal of Lanzhou Institute of Technology

基　　金：2021年度‘我为建设新福建献良策’(统一战线专项)课题(JAT21113)。

摘　　要：以提升硅的发光性能为目的,研究多孔硅掺杂的光学薄膜制备及发光性能。利用化学水沉积法,在多孔硅内掺杂硫化镉(CdS)金属,制备多孔硅掺杂的光学薄膜,并利用量子限制模型研究多孔硅掺杂的光学薄膜发光机理。通过光致发光测试仪与荧光/磷光分光光度计分析薄膜发光性能。结果显示:未进行金属掺杂的多孔硅内空隙较多,多孔硅掺杂的光学薄膜内空隙较小,空隙率随腐蚀处理时间延长逐渐下降。In order to improve the luminescence properties of silicon,the preparation and luminescence properties of porous silicon doped optical films were studied.The optical thin film doped with porous silicon was prepared with chemical water deposition method,and the luminescence mechanism of the optical thin film doped with porous silicon was studied by quantum confinement model.The luminescence properties of the films were analyzed by photoluminescence tester and fluorescence/phosphorescence spectrophotometer.The results show that the porous silicon without metal doping has more internal voids,while the porous silicon doped optical films have smaller internal voids,and the voids decrease gradually with the extension of corrosion treatment time.

关 键 词：多孔硅 金属掺杂 光学薄膜 发光性能 CD 电流密度 

分 类 号：TG178[金属学及工艺—金属表面处理]