Hyperdoped silicon:Processing,properties,and devices  

作　　者：Zhouyu Tong Mingxuan Bu Yiqiang Zhang Deren Yang Xiaodong Pi 

机构地区：[1]State Key Laboratory of Silicon Materials&School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China [2]School of Materials Science and Engineering&College of Chemistry,Zhengzhou University,Zhengzhou 450001,China [3]Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,Hangzhou Innovation Center,Zhejiang University,Hangzhou 311215,China

出　　处：《Journal of Semiconductors》2022年第9期10-24,共15页半导体学报（英文版）

基　　金：supported by the National Key Research and Development Program of China (Grant Nos. 2017YFA0205704 and 2018YFB2200101);the Natural Science Foundation of China (Grant Nos. 91964107 and U20A20209);provided by the Natural Science Foundation of China for Innovative Research Groups (Grant No. 61721005)

摘　　要：Hyperdoping that introduces impurities with concentrations exceeding their equilibrium solubility has been attract-ing great interest since the tuning of semiconductor properties increasingly relies on extreme measures.In this review we fo-cus on hyperdoped silicon(Si)by introducing methods used for the hyperdoping of Si such as ion implantation and laser dop-ing,discussing the electrical and optical properties of hyperdoped bulk Si,Si nanocrystals,Si nanowires and Si films,and present-ing the use of hyperdoped Si for devices like infrared photodetectors and solar cells.The perspectives of the development of hy-perdoped Si are also provided.

关 键 词：SILICON hyperdoping ion implantation laser doping PHOTODETECTORS solar cells 

分 类 号：TN304.12[电子电信—物理电子学]