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作 者:吕营 范思婷 李云凯 张晓航 陈小玲[1] 刘宇[1] LV Ying;FAN Siting;LI Yunkai;ZHANG Xiaohang;CHEN Xiaoling;LIU Yu(Nanchang Key Laboratory of Photoelectric Conversion and Energy Storage Materials,Nanchang Institute of Technology,Nanchang 330099,China)
机构地区:[1]南昌工程学院南昌市光电转换与储能材料重点实验室,江西南昌330099
出 处:《南昌工程学院学报》2022年第4期114-118,共5页Journal of Nanchang Institute of Technology
基 金:江西省教育厅科学技术研究项目(GJJ201931);国家自然科学基金资助项目(52102175)。
摘 要:深红—近红外长余辉发光材料在生物光学成像、信息存储和智能传感方面具有重要应用价值。采用传统高温固相法合成了Sm^(2+)和Sm^(2+)、Dy^(3+)掺杂的SrAl_(2)Si_(2)O_(8)长余辉发光材料,利用X射线衍射仪,荧光光谱对所得材料进行结构和光学性能表征。所制备的样品在被254 nm激发后表现出强烈的深红—近红外长余辉发光特性,SrAl_(2)Si_(2)O_(8)∶0.02Sm^(2+),0.01Dy^(3+)的余辉发光CIE坐标(10 min)为(0.6722,0.3275)。Dy^(3+)的引入能够产生更多的电子捕获陷阱,从而实现余辉性能的提升。本研究中新型深红—近红外余辉发光中心的探索及余辉性能提升策略有望为长余辉发光材料的开发提供新思路。Deep-red to near-infrared(NIR)persistent luminescent materials have great practical value in the fields of bio-imaging,information storage,and intelligent sensor.In this paper,Sm^(2+)singly-doped and Sm^(2+),Dy^(3+)co-doped SrAl_(2)Si_(2)O_(8)are successfully synthesized through traditional solid-state reaction.The structure and optical properties are characterized by an X-ray diffractometer and a florescence spectrometer.All samples show intense deep-red to NIR persistent luminescence(PersL)after being stimulated by 254 nm illumination.The CIE coordinates of SrAl_(2)Si_(2)O_(8):0.02Sm^(2+),0.01Dy^(3+)(PersL at 10 min)are(0.6722,0.3275).The introduction of Dy^(3+)can produce more electron capture traps,so as to improve the afterglow performance.The exploration of deep-red to NIR PersL emitter and strategy for the improvement of PersL may provide new insight into the development of PersL materials.
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