氧化锌半导体光催化纳米降解材料研究进展  

Research Progress of ZnO Semiconductor Photocatalytic Nano-degradation Materials

作　　者：张伟娜 宋锦博 叶鑫[1] 理记涛[1] 田华[1] ZHANG Wei-na;SONG Jin-bo;YE Xin;LI Ji-tao;TIAN Hua(School of Pharmacy,Shangqiu Medical College,Shangqiu Henan 476100,China;College of Chemistry,Zhengzhou University,Zhengzhou Henan 450001,China)

机构地区：[1]商丘医学高等专科学校药学院,河南商丘476100 [2]郑州大学化学学院,河南郑州450001

出　　处：《当代化工》2022年第7期1672-1678,共7页Contemporary Chemical Industry

基　　金：河南省博士后经费资助项目,基于石墨烯基新型功能化纳米材料的电化学生物传感器的研究(项目编号:001803005);河南省高等学校重点科研项目,M_(x)O_(y)/石墨烯/SnO_(2)纳米复合材料的制备及其光催化活性研究(项目编号:20B150018);商丘医学高等专科学校青年科研基金项目(科技攻关),M_(x)O_(y)/石墨烯/SnO_(2)纳米复合物的可控制备及其光催化性能研究(项目编号:2020-Qnjj-002);商丘医学高等专科学校博士科研启动项目,纳米分析技术在生物医药中的应用(项目编号:BSJH001);商丘医学高等专科学校博士后基金项目,新型功能化石墨烯纳米复合材料及其电化学生物传感(项目编号:BHJF001)。

摘　　要：Zn O是一种过渡金属氧化物直接禁带半导体材料,由于其独特的结构,其在压敏、气敏、压电、导电、光电等方面都具有很好的特性,尤其是其紫外区的激子发射,使其在催化降解有机物方面表现独特的优势。从n型半导体光催化纳米材料降解机理出发,引出具有宽禁带结构的Zn O n型半导体材料,重点介绍了氧化锌的结构、光学性能及催化降解机理,综述了其制备技术,最后对其研究方向进行了展望。ZnO is a kind of transition metal oxide direct band gap semiconductor material. It has good characteristics in pressure-sensitive, gas-sensitive, piezoelectric, conductive, photoelectric filed owing to its unique structure,especially its exciton emission in ultraviolet region, which makes it shows unique advantages in catalytic degradation of organic compounds. Based on the degradation mechanism of n type semiconductor photocatalytic nanomaterials, n type semiconductor material ZnO with wide band gap structure was introduced, and the structure, optical properties and catalytic degradation mechanism of ZnO were discussed, its preparation technology was reviewed, and the research direction was prospected.

关 键 词：氧化锌 半导体 光催化 降解材料 

分 类 号：TQ132.4[化学工程—无机化工]