碲镉汞与钙钛矿量子点薄膜异质结的界面电子态及其荧光特性  

Study on Interface Electronic States and Fluorescence Properties on Heterostructures of HgCdTe and Perovskite Quantum Dot Films

作　　者：王雅荣 房诗玉 房永征 孙常鸿[2] 叶振华[2] 刘玉峰 WANG Yarong;FANG Shiyu;FANG Yongzheng;SUN Changhong;YE Zhenhua;LIU Yufeng(School of Materials Science and Engineering,Shanghai Institute of Technology,Shanghai 201418,China;Key Laboratory of Infrared Imaging Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)

机构地区：[1]上海应用技术大学材料科学与工程学院,上海201418 [2]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083

出　　处：《应用技术学报》2022年第3期189-197,共9页Journal of Technology

基　　金：中国科学院红外成像材料与器件重点实验室开放基金(IIMDKFJJ-19-01);上海市自然科学基金面上项目(20ZR1455400)资助。

摘　　要：半导体异质结是有源光电子器件最重要的材料组成部分之一。构筑了窄带隙半导体碲镉汞(Hg_(0.7)Cd_(0.3)Te)和宽带隙CsPbBr_(3)半导体量子点薄膜的异质结,通过研究发现量子点与碲镉汞薄膜形成了Type-I异质结,CsPbBr_(3)钙钛矿量子点薄膜中的部分电子和空穴在辐射复合前转移至Hg_(0.7)Cd_(0.3)Te的价带与导带上,导致CsPbBr_(3)钙钛矿量子点薄膜的荧光强度下降;此外,钙钛矿电子空穴辐射复合发光的光子能量大于Hg_(0.7)Cd_(0.3)Te的带隙,部分荧光被Hg_(0.7)Cd_(0.3)Te吸收。最终CsPbBr_(3)钙钛矿量子点薄膜异质结的荧光强度下降至单独CsPbBr_(3)量子点薄膜强度的0.2倍,表明Type-I异质结中Hg_(0.7)Cd_(0.3)Te薄膜因界面的载流子传输导致其对CsPbBr_(3)量子点薄膜荧光具有重要的调制作用。Semiconductor heterostructure is one of the most important components of active optoelectronic devices.In this paper,the heterostructures of narrow-band gap Hg_(0.7)Cd_(0.3)Te semiconductor and wide-band gap CsPbBr_(3)semiconductor quantum dot films were constructed.Through the study,it was found that Type-I heterostructures were formed by the quantum dots and Hg_(0.7)Cd_(0.3)Te film.Some electrons and holes in CsPbBr_(3)perovskite quantum dot film were transferred to the valence band and conduction band of Hg_(0.7)Cd_(0.3)Te before radiation recombination,resulting in the decrease of fluorescence intensity of CsPbBr_(3)perovskite quantum dot film.In addition,the photon radiation energy of perovskite was greater than the band gap of Hg_(0.7)Cd_(0.3)Te,and part of the fluorescence was absorbed by Hg_(0.7)Cd_(0.3)Te.Finally,the fluorescence intensity of CsPbBr_(3)perovskite quantum dots film heterostructure decreased to 0.2 times that of CsPbBr_(3)quantum dots film alone,indicating that Hg_(0.7)Cd_(0.3)Te film in Type-I heterostructures had an important modulation effect on fluorescence of CsPbBr_(3)quantum dots film due to carrier transport at the interface.

关 键 词：碲镉汞 钙钛矿 量子点 异质结 

分 类 号：TB321[一般工业技术—材料科学与工程] TN304[电子电信—物理电子学]