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作 者:冯晓颖 周黎阳 许心 王挥 阎彬 许晓宇 许杰[1] 高峰[1] FENG Xiaoying;ZHOU Liyang;XU Xin;WANG Hui;YAN Bing;XU Xiaoyu;XU Jie;GAO Feng(State Key Lab.of Solidification Processing,School of Materials Science and Engineering,Northwestern Polytechnical University,Xi’an 710072,China;No.771 Institute,No.9 Academy,China Aerospace Science and Technology Corporation,Xi’an 710065,China;Dept.of Orthopedic Trauma,Honghui Hospital Affiliated to Xi’an Jiaotong University,Xi’an 710054,China)
机构地区:[1]西北工业大学材料学院,凝固技术国家重点实验室,陕西西安710072 [2]中国航天科技集团有限公司第九研究院第七七一研究所,陕西西安710065 [3]西安交通大学附属红会医院创伤骨科环骨盆病区,陕西西安710054
出 处:《压电与声光》2022年第4期531-536,共6页Piezoelectrics & Acoustooptics
基 金:国家自然科学基金资助项目(面上项目,重点项目,重大项目)。
摘 要:采用传统固相法制备了0.75Pb(Zr_(1/2)Ti_(1/2))O_(3)-xPb(Zn_(1/3)Nb_(2/3))O_(3)-(0.25-x)Pb(Ni_(1/3)Nb_(2/3))O_(3)(0.75PZT-xPZN-(0.25-x)PNN,摩尔分数x=0.05,0.10,0.15,0.20)压电陶瓷,研究了x值对陶瓷晶体结构、烧结特性、微观组织和介电、铁电、压电性能的影响规律。结果表明,陶瓷中三方相和四方相共存,当x=0.10~0.20时,陶瓷组分位于准同型相界(MPB)附近。随着PZN含量的增加,三方相含量减少,四方相含量增加,陶瓷的介电常数(ε_(T))、压电常数(d_(33))、机电耦合系数(k_(p))和能量转化因子(d_(33)×g_(33))均随之先增大后减小,当x=0.15时,0.75PZT-0.15PZN-0.10PNN陶瓷具有最佳电学性能,即ε_(T)=1850,公电损耗tanδ=0.029,居里温度T_(C)=280℃,d_(33)=370 pC/N,k_(p)=0.67。The 0.75Pb(Zr_(1/2)Ti_(1/2))O_(3)-xPb(Zn_(1/3)Nb_(2/3))O_(3)-(0.25-x)Pb(Ni_(1/3)Nb_(2/3))O_(3)(0.75PZT-xPZN-(0.25-x)PNN,x=0.05,0.10,0.15,0.20)ceramics were prepared with conventional solid-state method,the effects of different x values on the crystal structure,sintering characteristics,microstructure,and the dielectric,ferroelectric,piezoelectric properties of ceramics were investigated.The result showed that the rhombohedral and tetragonal phases coexisted in the ceramics and the components were located near the MPB when x=0.10~0.20.As the PZN content increased,the rhombohedral phase decreased,the tetragonal phase increased,and the dielectric constant(ε_(T)),piezoelectric constant(d_(33)),electromechanical coupling coefficient(k_(p))and transduction coefficient(d_(33)×g_(33))increased firstly and then decreased.When x=0.15,the ceramics with the composition of 0.75PZT-0.15PZN-0.10PNN showed excellent properties with ε_(T)=1850,tanδ=0.029,T_(C)=280℃,d_(33)=370 pC/N,and k_(p)=0.67.
关 键 词:压电陶瓷 组分设计 准同型相界(MPB) 居里温度 压电性能
分 类 号:TN384[电子电信—物理电子学]
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