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作 者:Dong Wang Sihong Shao Changhao Yan Wei Cai Xuan Zeng
机构地区:[1]State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 201203,China. [2]LMAM and School of Mathematical Sciences,Peking University,Beijing 100871,China. [3]Department of Mathematics and Statistics,University of North Carolina at Charlotte,Charlotte,NC 28223,USA.
出 处:《Communications in Computational Physics》2014年第10期1389-1418,共30页计算物理通讯(英文)
基 金:D.W.,C.Y.and X.Z.were partially supported by National Natural Science Foundation of China(Nos.61125401,61376040,61228401,61274032);the National Basic Research Program of China(No.2011CB309701);the National Major Science and Technology Special Project of China(Nos.2011ZX01035-001-001-003,2014ZX02301002-002);Shanghai Science and Technology Committee project(No.13XD1401100);the State Key Laboratory of ASIC and System(Fudan University)research project(No.11MS013);.S.S.was partially supported by the National Natural Science Foundation of China(Nos.11101011,91330110);the Specialized Research Fund for the Doctoral Program of Higher Education(No.20110001120112);the State Key Laboratory of ASIC and System(Fudan University)open research project(No.10KF015);W.C.was partially supported by the US Army Office of Research(No.W911NF-11-1-0364);the National Science Foundation of USA(No.DMS-1315128);the National Natural Science Foundation of China(No.91330110).
摘 要:In this paper,the mechanisms of material removal in chemical mechanical polishing(CMP)processes are investigated in detail by the smoothed particle hydrodynamics(SPH)method.The feature-scale behaviours of slurry flow,rough pad,wafer defects,moving solid boundaries,slurry-abrasive interactions,and abrasive collisions are modelled and simulated.Compared with previous work on CMP simulations,our simulations incorporate more realistic physical aspects of the CMP process,especially the effect of abrasive concentration in the slurry flows.The preliminary results on slurry flow in CMP provide microscopic insights on the experimental data of the relation between the removal rate and abrasive concentration and demonstrate that SPH is a suitable method for the research of CMP processes.
关 键 词:Chemical mechanical polishing smoothed particle hydrodynamics particulate flow rough pad wafer defects abrasive concentration.
分 类 号:TG1[金属学及工艺—金属学]
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