A dynamic photoresponse model for a pinned photodiode in CMOS image sensors  

作　　者：AO Jinghua GAO Zhiyuan GAO Jing XU Jiangtao 

机构地区：[1]Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology,School of Microelectronics,Tianjin University,Tianjin University,Tianjin 300072,China

出　　处：《Optoelectronics Letters》2022年第7期419-424,共6页光电子快报（英文版）

基　　金：supported by the National Key R&D Program of China(No.2019YFB2204301)。

摘　　要：A novel dynamic photoresponse model for complementary metal-oxide-semiconductor(CMOS)image sensors with pinned photodiode(PPD)structures is proposed.The PPD is regarded as the bonding structure of the two p-n junctions.The transient current equation of the two junctions is calculated by the current-voltage formula of the p-n junction,and the photoresponse curve of the PPD is calculated and drawn by the numerical solution.Simulation results show that the dynamic model successfully restores the entire process of the electron accumulation in the PPD.The difference between the full well capacity(FWC)values which were calculated by the proposed model and the simulation results is less than 5%,which is much smaller than the error of 40%for the traditional model.

关 键 词：PHOTORESPONSE pinned DYNAMIC 

分 类 号：TN36[电子电信—物理电子学] TP212[自动化与计算机技术—检测技术与自动化装置]