溅射法制备n型碲化镉薄膜的光电化学特性研究  

Photoelectrochemical properties of sputtered n-type CdTe thin films

作　　者：曹萌 虞斌[1] 张翔 许成刚 张珊 孙丽颖 谭小宏 姜昱丞 豆家伟 王林军 CAO Meng;YU Bin;ZHANG Xiang;XU Cheng-Gang;ZHANG Shan;SUN Li-Ying;TAN Xiao-Hong;JIANG Yu-Cheng;DOU Jia-Wei;WANG Lin-Jun(State Key Laboratory of Nuclear Power Safety Monitoring Technology and Equipment,China Nuclear Power Engineering Co.,Ltd.,Shenzhen 518172,China;School of Materials Science and Engineering,Shanghai University,Shanghai,200072,China;Key Laboratory of infrared imaging materials and detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai,200083,China;Intensive Care Unit,Yangpu District Shidong Hospital,,Shanghai 200438,China;School of Physical Science and Technology,Suzhou University of Science and Technology,Suzhou 215009,China;Zhejiang Institute of Advanced Materials,SHU,Jiashan 314113,China)

机构地区：[1]中广核工程有限公司核电安全监控技术与装备国家重点实验室,广东深圳,518172 [2]上海大学材料科学与工程学院,上海200072 [3]中国科学院上海技术物理研究所红外成像材料和探测器实验室,上海200083 [4]杨浦区市东医院重症监护科室,上海200438 [5]苏州科技大学物理科学与技术学院,江苏苏州215009 [6]上海大学(浙江)高端装备基础件材料研究院,浙江嘉善314113

出　　处：《红外与毫米波学报》2022年第4期659-667,共9页Journal of Infrared and Millimeter Waves

基　　金：Supported by Open Topic of the State Key Laboratory of Nuclear Power Safety Monitoring Technology and Equipment(K-A 2019.418);Open Topic of Key Laboratory of Infrared Imaging Materials and Devices(IIMDKFJJ-20-01)。

摘　　要：采用溅射法制备了n型碲化镉薄膜。研究了不同沉积时间制备的n型碲化镉薄膜的形貌、结构和光学性质,以及薄膜厚度和退火工艺对n型碲化镉薄膜光电化学特性的影响。实验结果表明,溅射时间为25 min的碲化镉薄膜具有较好的PEC性能。退火工艺可以提高沉积的n型碲化镉薄膜的光电化学性能。当用饱和氯化镉溶液涂覆碲化镉薄膜并在真空中400℃退火时,n型碲化镉薄膜的光电化学性能最佳,光电流达到301μA/cm^(2)。In this paper,n-type CdTe thin films were prepared by sputtering method.The morphology,structure and optical properties of n-type CdTe thin films deposited with different time and the influence of film thickness and annealing process on the photoelectrochemical(PEC)characteristics of n-type CdTe thin films were studied.The experimental results demonstrated that CdTe thin films with sputtering time of 25 min had better PEC performance.Annealing process could enhance the PEC properties of deposited n-type CdTe thin films.When CdTe thin films were coated with saturated CdCl_(2) solution and annealed in vacuum at 400°C,the photocurrents of ntype CdTe thin films achieved 301μA/cm^(2).

关 键 词：碲化镉 溅射 光电化学 退火 

分 类 号：TB34[一般工业技术—材料科学与工程]