一种ZnO单晶肖特基结X射线探测器及其特性研究  

Characterizations of Schottky X-Ray Detector Based on ZnO Single Crystal

作　　者：黄丹阳 赵小龙[1,2] 贺永宁 彭文博[1,2] HUANG Danyang;ZHAO Xiaolong;HE Yongning;PENG Wenbo(Faculty of Electronic and Information Engineering,Xi’an Jiaotong University,Xi’an 710049,China;The Key Lab of Micro-Nano Electronics and System Integration of Xi’an City,Xi’an 710049,China)

机构地区：[1]西安交通大学电子与信息学部,西安710049 [2]西安市微纳电子与系统集成重点实验室,西安710049

出　　处：《西安交通大学学报》2022年第9期169-175,共7页Journal of Xi'an Jiaotong University

基　　金：国家自然科学基金资助项目(62004158)。

摘　　要：针对传统的硅基辐射探测器在极端环境应用中表现出抗辐照和耐高温能力差的问题,提出并实现了一种采用ZnO单晶制备的肖特基结X射线探测器,并对其各项电学特性进行了测试分析。利用磁控溅射法在ZnO单晶的两面分别制备了Au电极和Al电极;在400℃下退火使得Au-ZnO形成肖特基接触,Al-ZnO形成欧姆接触。常温暗场条件下电流特性测试结果表明:器件的反向电流与温度的倒数成指数关系;在-10 V反向偏置电压下的器件电流为15μA,10 V正向偏置电压下的电流为100μA;在偏置电压为-10 V时测量器件对X射线的响应,发现响应电流随射线电子束流的增加而增加;当加速电压为30 keV、入射X射线电子束流在1~10μA范围内时器件有较高的能量分辨率;在偏置电压为-10 V条件下对器件施加以周期性光照时,器件上升时间和下降时间分别为0.04 s和3.59 s,响应速度快且重复性好。该研究结果表明,基于ZnO单晶的Au/ZnO/Al结构的肖特基结探测器件在X射线探测领域具有较好的应用前景。As traditional silicon-based radiation detectors reveal their intolerance to radiation and high temperature,a Schottky junction X-ray detector based on ZnO single crystal is proposed and realized.Its various electrical characteristics are measured and analyzed.Au electrode and Al electrode are fabricated on the front side and back side of the ZnO single crystal by RF magnetron sputtering method.The device is annealed at 400℃to get a Schottky contact with Au and ZnO and ohmic contact with Al and ZnO.The results of current characteristic tests at room temperature in the dark show that the reverse current of the device is exponentially related to the reciprocal of temperature,and the current is 15μA at a reverse bias voltage of-10 V and 100μA at 10 V.The response of the device to X-ray is measured at a bias voltage of-10 V,and it is found that the response current increases with the increase of the ray electron beam.Higher energy resolution is achieved when the incident tube current ranges from 1-10μA while the acceleration voltage is 30 keV.When the device is periodically illuminated at a bias voltage of-10 V,the device has a rise time and fall time of 0.04 s and 3.59 s respectively and has quick response and good reproducibility.The study results show that Au/ZnO/Al structured Schottky detector has application prospect for the X-ray detection field.

关 键 词：ZNO单晶 肖特基结 X射线探测 半导体探测器 

分 类 号：TN364[电子电信—物理电子学]