Ag元素掺杂Bi_(2)S_(3)薄膜的制备及其光电性能研究  

Preparation and photoelectric property of Ag-doped Bi2S3 film

作　　者：王家钰 周威 谭海军[1] 龚琪芯 黎燕[1] 钟福新[1] Wang Jiayu;Zhou Wei;Tan Haijun;Gong Qixin;Li Yan;Zhong Fuxin(Guangxi Key Laboratory of Electromagnetic Functional Substances,School of Chemistry and Biological Engineering,Guilin University of Technology,Guilin 541004)

机构地区：[1]桂林理工大学化学与生物工程学院,电磁化学功能物质广西区重点实验室,桂林541004

出　　处：《化工新型材料》2022年第8期100-105,共6页New Chemical Materials

基　　金：国家自然科学基金(61765005,61264007)。

摘　　要：利用连续离子沉积法和水热法在FTO基底上制备了Ag^(+)掺杂Bi_(2)S_(3)薄膜(Ag-Bi_(2)S_(3)),探究了Ag^(+)浓度对Bi_(2)S_(3)薄膜光电性能的影响。并用扫描电镜、能谱、X射线衍射(XRD)、紫外-可见分光光度计(UV-Vis DRS)等手段对其进行表征。结果表明:Ag-Bi_(2)S_(3)薄膜局部出现由较短的条状晶体聚集形成的花辫带,并有Ag元素的能谱峰,Ag^(+)掺杂进Bi_(2)S_(3)薄膜;在Ag-Bi_(2)S_(3)的XRD衍射峰中出现AgBiS2相的衍射峰,表明Ag元素在Ag-Bi_(2)S_(3)薄膜中的存在形式为AgBiS2;UV-Vis DRS测试结果显示Bi_(2)S_(3)薄膜和Ag-Bi_(2)S_(3)薄膜的禁带宽度分别为1.65eV和1.47eV;Ag-Bi_(2)S_(3)薄膜的光电压和光电流分别为0.2013V和0.059mA/cm^(2),比Bi_(2)S_(3)薄膜的光电压和光电流分别提高了30.6%与168.1%;Ag-Bi_(2)S_(3)的载流子浓度4.83×10^(14)cm^(-3),比Bi_(2)S_(3)的8.17×10^(12)cm^(-3)提升了两个数量级。The Ag^(+)doped Bi_(2)S_(3)film(Ag-Bi_(2)S_(3))was prepared on the FTO substrate by continuous ion deposition method and hydrothermal method.The influence of Ag^(+)doping concentration on the photoelectric performance of Bi_(2)S_(3)film was explored.it was characterized by SEM,EDS,XRD,UV-Vis and other means.The results shown that in the SEM image of the Ag-Bi_(2)S_(3)thin film,there were locally flower braids belt by the aggregation of shorter strip crystals,and the peak of Ag element appeared in the EDS spectrum,indicating that Ag^(+)was successfully doped into the Bi_(2)S_(3)thin film.AgBiS_(2)diffraction peaks for XRD appeared in the Ag-Bi_(2)S_(3)phase diffraction peaks,indicating that the Ag element in the Ag-Bi_(2)S_(3)film was AgBiS_(2).The UV-Vis DRS test results shown that the band gaps of the Bi_(2)S_(3)film and the Ag-Bi_(2)S_(3)film were 1.65eV and 1.47eV,respectively.The photovoltage and photocurrent of the Ag-Bi_(2)S_(3)film were 0.2013Vand 0.059mA/cm^(2),respectively,which were 30.6%and 168.1%higher than those of the Bi_(2)S_(3)film.The carrier concentration of Ag-Bi_(2)S_(3) was 4.83×10^(14) cm^(-3),which was two orders of magnitude higher than the 8.17×10^(12)cm^(-3) of Bi_(2)S_(3).

关 键 词：银掺杂 硫化铋 光电性能 

分 类 号：TN305.5[电子电信—物理电子学] TB383.1[一般工业技术—材料科学与工程]