有源层厚度对柔性AZO-TFT电学性能的影响  

Influece of Active Layer Thickness on the Electrical Properties of Flexible AZO-TFT

作　　者：李超[1] 王超[1] 杨帆 王艳杰 

机构地区：[1]吉林建筑大学电气与计算机学院,长春130118

出　　处：《日用电器》2022年第8期92-96,116,共6页ELECTRICAL APPLIANCES

基　　金：吉林省科技计划项目(2022-KL-09);吉林省科技发展计划项目(20200201177JC);吉林省科技厅中央引导地方科研项目(202002012JC);吉林省科技厅(YDZJ202201ZYTS430);吉林省教育厅科学技术研究项目(JJKH20210256KJ,JJKH20210277KJ,JJKH20210276KJ)。

摘　　要：在室温下,采用射频磁控溅射法在聚酰亚胺(Polyimide PI)衬底上制备了掺铝氧化锌(AZO)薄膜作为薄膜晶体管(TFT)的有源层,AZO薄膜厚度分别为53 nm,62 nm,79 nm,94 nm。采用扫描电子显微镜(SEM)和X射线衍射仪(XRD)测试分析了不同厚度AZO薄膜的表面形貌、晶粒生长情况,并利用半导体参数仪对柔性AZO-TFT的电学性能进行了测试,研究了有源层厚度对柔性AZO-TFT电学性能的影响。结果表明:AZO薄膜为非晶结构,随着薄膜厚度的增加,薄膜成膜质量提高,均匀致密,当厚度为79 nm时器件获得最佳性能,其饱和迁移率达到2.21 cm^(2)·(Vs),开关比为6.62×10^(4),亚阈值摆幅为1.31 V·dec,阈值电压为10.76 V。Aluminum-doped zinc oxide (AZO) thin films with thickness of 53 nm,62 nm,79 nm,94 nm were prepared by rf magnetron sputtering at room temperature as the active layer of thin film transistor (TFT).The surface morphology and grain growth of AZO films with different thickness were analyzed by scanning electron microscopy (SEM) and X-ray diffraction (XRD),and the electrical properties of flexible AZO-TFT were tested by semiconductor parameter analyzer,and the effect of active layer thickness on the electrical properties of flexible AZO-TFT was studied.The results show that:AZO films are amorphous structure,and the film forming quality is improved with the increase of film thickness.The device has the best performance when the thickness is 79 nm,the saturation mobility is 2.21 cm^(2)·(V·s),the switching ratio is 6.62×10^(4),and the subthreshold swing is 1.31 V·Dec.The threshold voltage is 10.76 V.

关 键 词：柔性 厚度 铝掺杂氧化锌(AZO) 薄膜晶体管 

分 类 号：TN321.5[电子电信—物理电子学]