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作 者:杨华光 徐燕萍 胡斯哲 周继东 岳宏卫[1] YANG Huaguang;XU Yanping;HU Sizhe;ZHOU Jidong;YUE Hongwei(Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology,Guilin,Guangxi 541004,P.R.China)
机构地区:[1]桂林电子科技大学广西精密导航技术与应用重点实验室,广西桂林541004
出 处:《微电子学》2022年第3期393-398,405,共7页Microelectronics
基 金:国家自然科学基金资助项目(12064003)。
摘 要:基于0.18μm CMOS工艺,设计了一种应用于10 GHz以下无线通信频段的两级超宽带低噪声放大器(LNA)。第一级在互补共源级的基础上通过引入电阻反馈、电感峰化技术和伪电阻结构,在拓展带宽和提高增益的同时降低了噪声。第二级在共源放大的基础上通过电感峰化技术、增益辅助级和缓冲级的使用,提高了电路的增益并改善了输出宽带匹配特性。仿真结果表明,在0.5~9.2 GHz频率范围内,电路增益为14.2±0.2 dB,噪声系数(NF)小于3.97 dB,整体功耗为12.9 mW。Based on a 0.18μm CMOS process,a two-stage ultra-wideband low noise amplifier(LNA)was designed for the applications in wireless communication bands below 10 GHz.The first stage,based on the complementary common-source stage,introduced the structures of resistor feedback,inductance peaking technology and pseudo-resistor to improve the bandwidth and gain while reducing noise.The second stage introduced inductance peaking technology,gain auxiliary stage and buffer stage on the basis of common-source amplification,which were mainly used to increase the circuit gain and improve the output broadband matching characteristics.The simulation results showed that the gain was 14.2±0.2 dB,the noise figure(NF)was less than 3.97 dB,and the overall power consumption was 12.9 mW within the frequency range of 0.5~9.2 GHz.
分 类 号:TN722.3[电子电信—电路与系统]
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