高介陶瓷薄膜小型化器件制备关键工艺  

Key Processing Technology of High-k Thin Film Ceramic Miniaturized Devices

作　　者：王春富[1] 马宁 王文博 李彦睿[1] 高阳[1] 张健[1] 何建[1] 秦跃利[1] WANG Chunfu;MA Ning;WANG Wenbo;LI Yanrui;GAO Yang;ZHANG Jian;HE Jian;QIN Yueli(The 29th Research Institute of CETC,Chengdu 610036,China)

机构地区：[1]中国电子科技集团公司第二十九研究所,成都610036

出　　处：《电子工艺技术》2022年第5期254-258,共5页Electronics Process Technology

摘　　要：为满足电子系统小型化和轻量化的集成需求,采用高介陶瓷制作射频无源器件以减小系统关键部位的体积。试验并优化了高介陶瓷薄膜电路制作流程中的关键工艺,确定了与高介陶瓷匹配的工艺方法及参数,成功制作出了基于高介陶瓷的小型化薄膜器件。与传统氧化铝基器件对比,在性能相当的情况下,器件体积缩小了55%,小型化效果显著,满足了应用需求。To meet the integration requirements of miniaturization and lightweight of electronics systems,RF passive devices are processed with high-k ceramic to reduce the volume of key parts of the system.The key technology in the process of high-k ceramic thin film circuits is tested and optimized,and the miniaturized thin film devices based on high-k ceramic is successfully fabricated by discovering the optimal technique and corresponding parameters.Compared with the aluminum oxide ceramic based devices,the volume of high-k ceramic based devices is significantly reduced by 55% under the same performance,and the miniaturization effect is remarkable,which meets the application requirement entirely.

关 键 词：高介陶瓷基板 薄膜器件 小型化集成 射频无源器件 

分 类 号：TN605[电子电信—电路与系统]