IGBT并联时的发射极环流现象分析  

Analysis of Phenomenon of Emitter Circulation in IGBT Parallel Connection

作　　者：梁锐 LIANG Rui(Guangdong Midea HVAC Equipment Co.,Ltd.,Foshan528311,China)

机构地区：[1]广东美的暖通设备有限公司,广东佛山528311

出　　处：《电力电子技术》2022年第6期137-140,共4页Power Electronics

摘　　要：大功率电机做变频驱动设计时,为控制采购成本,大部分的设计方法是进行绝缘栅双极型晶体管(IGBT)并联使用,IGBT是由双极型三极管和绝缘栅型场效应管组成的复合全控型电压驱动式功率半导体器件,兼有金属氧化物半导体场效应晶体管(MOSFET)的高输入阻抗和电力晶体管(GTR)的低导通压降两方面的优点,非常适合应用于直流电压为600 V及以上的变流系统如交流电机、变频器、开关电源、牵引传动等领域。这里分析了IGBT并联产生的发射极环流现象,并就发射极环流的大小控制和部分器件参数计算提出了解决方法。In the design of variable frequency drive for high-power motor,in order to control the procurement cost,most of the design methods are to use insulated gate bipolar transistor(IGBT) in parallel.IGBT is a composite fully controlled voltage driven power semiconductor device composed of bipolar triode and insulated gate field effect transistor,which has the advantages of high input impedance of metal oxide semiconductor field effect transistor(MOSFET) and low conduction voltage drop of giant transistor(GTR).It is very suitable for converter systems with direct current voltage of 600 V and above,such as alternating current motor,frequency converter,switching power supply,traction drive and so on.The phenomenon of emitter circulation in IGBT parallel connection is analyzed,and the solutions to the control of emitter circulation and the calculation of some device parameters are proposed.

关 键 词：绝缘栅双极型晶体管 电力晶体管 发射极环流 

分 类 号：TN32[电子电信—物理电子学]