SiC单管并联模组功率循环及失效机理研究  

Study on Power Cycling and Failure Mechanism of SiC Discretes Parallel Module

作　　者：魏兆阳 王佳宁 黄耀东 樊志鑫 WEI Zhao-yang;WANG Jia-ning;HUANG Yao-dong;FAN Zhi-xin(Hefei University of Technology,National and Local Joint Engineering Laboratory for Renewable Energy Access to Grid Technology,Hefei 230009,China)

机构地区：[1]合肥工业大学,可再生能源接入电网国家地方联合工程实验室,安徽合肥230009 [2]合肥综合性国家科学中心能源研究院,安徽合肥230031

出　　处：《电力电子技术》2022年第8期123-127,共5页Power Electronics

基　　金：国家自然科学基金面上项目(52077051);合肥综合性国家科学中心能源研究院科研项目(19KZS207)。

摘　　要：碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)凭借其优越的材料特性正逐渐替代硅(Si)基器件成为电力变换的核心器件,其长期运行的可靠性是一直以来的研究焦点。功率循环试验是评估其可靠性的有效方法,但目前大多试验的研究对象均为独立的单管或模块,此处将由多个SiC MOSFET单管、陶瓷片、导热硅脂、叠层母排及水冷散热器组成的模组作为研究对象,通过功率循环试验对其整体可靠性进行评估,并通过结构函数法实现模组整体热阻的监测以及导热硅脂热阻退化程度的判断。试验结果表明,在功率循环试验后SiC MOSFET单管结到外壳的热阻基本保持不变,模组的失效原因为导热硅脂层热阻增大引起结温升高,最终导致键合线先失效。Silicon carbide(SiC)metal oxide semiconductor field effect transistor(MOSFET)with its superior material characteristics is gradually replacing silicon(Si)based devices as the core of power conversion devices,its long-term reliability has been the focus of research.The power cycling test is an effective method to evaluate its reliability,but most of the current research objects are independent discrete or modules.The module composed of multiple SiC MOSFET discrete is taken,ceramic pieces,thermal grease,laminated busbar and water cooling radiator as the research object,through the power cycling test to evaluate its overall reliability.The overall thermal resistance of the module and the thermal resistance degradation degree of thermal grease are measured by structural function method.The test results show that the thermal resistance of the SiC MOSFET junction to the case remains basically unchanged after the power cycling test,the failure of the module is caused by the increase in the thermal resistance of the thermal grease layer,which causes the junction temperature to increase,and finally leads to the bonding wire to fail first.

关 键 词：金属氧化物半导体场效应晶体管 功率循环 失效机理 

分 类 号：TN32[电子电信—物理电子学]