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作 者:吴元庆[1] 王婷[1] 李崎嫚 刘春梅[1] 彭国良 WU Yuanqing;WANG Ting;LI Qiman;LIU Chunmei;PENG Guoliang(School of Physical Science and Technology,Bohai University,Jinzhou121013,Liaoning Province,China;School of Microelectronics,Xi'an University of Electronic Science and Technology,Xi'an 710071,China)
机构地区:[1]渤海大学物理科学与技术学院,辽宁锦州121013 [2]西安电子科技大学微电子学院,陕西西安710071
出 处:《电子元件与材料》2022年第8期810-815,共6页Electronic Components And Materials
基 金:国家自然科学基金(61575029);辽宁省高等学校创新人才支持计划项目(LR2017051)。
摘 要:针对TOF图像传感器转移效率不高的问题,利用Silvaco软件基于0.18μm CMOS工艺对传感器进行了建模和优化。通过电学和光学仿真,模拟了TOF图像传感器的复位、曝光等工作状态,探讨了曝光强度、曝光时间等对器件量子效率的影响。通过对模型进行防穿通注入工艺优化,很好地实现了钳位光电二极管和浮空节点的隔离。探讨了TOF中PPD的电荷快速转移优化,通过公式计算,获得改进后的优化模型,仿真结果证明其具有良好的转移速度和转移效率,平均转移时间节省近10倍,大大提高了电荷转移效率,为TOF图像传感器的优化和设计提供一个改进思路。To solve the problem of low transfer efficiency,the time of flight(TOF) sensor was modeled and optimized by Silvaco software based on 0.18 μm CMOS process.Through electrical and optical simulation,the working condition of the TOF image sensor,such as reset and exposure,were simulated,and the effects of the exposure intensity and exposure time on the quantum efficiency of the device were discussed.The isolation of PPD and FD was realized by anti-penetration injection process.And the fast charge transfer optimization of PPD was discussed,the improved optimization model was obtained through the calculation.The simulation results show that it has good transfer speed,and the average transfer time is reduced by 10 times,which greatly improves the charge transfer efficiency.This provides an idea for the optimization and design of TOF image sensor.
分 类 号:TP212[自动化与计算机技术—检测技术与自动化装置] TP391.41[自动化与计算机技术—控制科学与工程]
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