一种具有多晶硅二极管栅极结构的槽栅IGBT设计  

Design of a trench IGBT with poly silicon diodes gate structure

作　　者：王波 胡汶金[2] 赵一尚 李泽宏 任敏[2] WANG Bo;HU Wenjin;ZHAO Yishang;LI Zehong;REN Min(SCIG Information Industry Group Co.,Ltd.,Chengdu610000,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu610054,China)

机构地区：[1]川投信息产业集团有限公司,四川成都610000 [2]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《电子元件与材料》2022年第8期834-841,共8页Electronic Components And Materials

摘　　要：为改善传统槽栅IGBT结构开启损耗和电磁干扰噪声两种电学参数间的矛盾关系,在N型Poly栅极和槽栅底部之间引入P型Poly栅极,提出了一种具有多晶硅二极管栅极结构的槽栅IGBT结构(PDG-TIGBT),并实现了工艺制程的设计。多晶硅栅结构中的低掺杂P型Poly栅极与漂移区相互耗尽形成栅内耗尽电容,在较高的集电极电压下可将器件密勒电容C_(GC)降低70.7%,并将槽栅底部电位V_(acc)抬升146%。密勒电容的减小和槽栅底部电位的提升可有效优化IGBT开启特性与噪声特性的折中关系,仿真结果表明:相较于传统槽栅结构,PDG-TIGBT有效地抑制了电磁干扰噪声对器件电学性能的影响。在开启瞬态,PDG-TIGBT的槽栅底部电位增长速度dV_(acc)/dt减小23.5%,集电极电流变化率最大值dI_(CE)/dt_((max))减小45.8%。在开启损耗E_(ON)保持一致的前提下,PDG-TIGBT的dI_(CE)/dt_((max))减小了84.2%,dV_(KA)/dt_((max))下降了44.4%。In order to improve the contradictory relationship between the turn-on loss and electromagnetic interference noise of the traditional trench gate IGBT structure,by introducing P-type Poly gate between N-type Poly gate and bottom of the IGBT structure,a novel IGBT structure with poly silicon diode gate structure(PDG-TIGBT)was proposed,and the process design was realized.The low doped P-type Poly gate and the drift region are mutually depleted to form a depletion capacitance in the gate,which can effectively reduce the Miller capacitance C_(GC) by 70.7%and raises the potential V_(acc) near the trench gate by 146%at a higher collector voltage.These are beneficial for optimizing the trade-off relationship between the turn-on characteristics and the noise characteristics of the IGBT.The simulation results show that,compared with the traditional trench gate structure,PDG-TIGBT demonstrated drastic suppression of electromagnetic interference noise.During the transient state,the potential growth rate dV_(acc)/dt at the bottom of the trench gate decreases by 23.5%,the maximum collector current change rate dI_(CE)/dt_((max))decreases by 45.8%.While keeping the turn-on loss E_(ON) constant,the dI_(CE)/dt_((max))of PDG-TIGBT is reduced by 84.2%,and the dV_(KA)/dt_((max))is reduced by 44.4%.

关 键 词：槽栅IGBT 多晶二极管 密勒电容 电磁干扰 

分 类 号：TN322.8[电子电信—物理电子学]