Ni/ZnO/BiFeO_(3)/ZnO多层膜中磁场调控的电阻开关效应  

Resistance switching effect regulated by magnetic field in Ni/ZnO/BiFeO_(3)/ZnO multilayers

作　　者：张兴文 何朝滔 李秀林 邱晓燕[1] 张耘[1] 陈鹏[1] Zhang Xing-Wen;He Chao-Tao;Li Xiu-Lin;Qiu Xiao-Yan;Zhang Yun;Chen Peng(School of Physics Science and Technology,Southwest University,Chongqing 400715,China)

机构地区：[1]西南大学物理科学与技术学院,重庆400715

出　　处：《物理学报》2022年第18期314-321,共8页Acta Physica Sinica

摘　　要：阻变存储器由于具有读取速度快、存储密度大、存储时间长、低功耗和结构简单等主要特点,已被看为下一代非易失性随机存储器的重要候选者.本文研究了Ni/ZnO/BiFeO_(3)/ZnO/ITO多层纳米薄膜器件的电阻开关特性,发现器件具有明显的双极性电阻开关效应,而且样品的电阻开关特性随外加磁场的干涉会有明显变化,包括开关比、耐受性和电导率.磁场对Ni/ZnO/BiFeO_(3)/ZnO/ITO薄膜器件的显著调控作用应该起源于磁场使得Ni/ZnO界面处的肖特基势垒改变.这项工作可以为磁控电阻开关效应提供一种可能的新机制,在未来的存储器器件中具有重要的潜在应用价值.The 21st century is an era of information.In recent years,people’s demand for better data storage performance and stronger data processing capacity of memorizer has been increasing,which has prompted continuous improvement and innovation of semiconductor integrated processes and technologies and accelerated the research progress of the next generation of memory devices to break through the limits of Moore’s law.Resistive memory has been regarded as an important candidate for the next generation of non-volatile random access memory due to its main characteristics such as fast reading speed,high storage density,long storage time,low power consumption,and simple structure.Resistive switching effects have been observed in various transition metal oxides and complex perovskite oxides,but the appropriate description of the resistive switching drive mechanism is still an important issue in the development of resistive random access memories.Therefore,further research is very important to clearly explain the phenomenon of resistance switching.With the demand for data storage and sensor applications increasing,materials with excellent ferroelectric and ferromagnetic properties have attracted great attention.The ZnO is an important semiconductor material with excellent optical and electrical properties.Bismuth ferrate(BiFeO_(3))has received much attention due to its excellent properties in epitaxial and polycrystalline thin films,with hundreds of publications devoted to it in the past few years.The ZnO and BiFeO_(3)are both important electronic materials and have important application value.Therefore,ZnO/BiFeO_(3)/ZnO structure is adopted in this work to study the resistance switch characteristics.The resistance conversion effect in ZnO/BiFeO_(3)/ZnO structure is measured.In this work,the Ni/ZnO/BiFeO_(3)/ZnO/ITO multilayer nano-film storage device is prepared by magnetron sputtering coating technology.The device is characterized by X-ray diffractometer,scanning electron microscope and other equipment,and its resistanc

关 键 词：多层纳米薄膜结构 电阻开关效应 磁调控 氧空位 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]