石墨烯/6H-SiC(0001)表面高质量USb_(2)薄膜的制备和表征  

Preparation and Characterization of High-Quality USb_(2) Thin Films on Graphene/6H-SiC(0001)

作　　者：王西洋 郝群庆 张云[1] 潘启发 陈秋云[1] 冯卫[1] 王永欢 朱燮刚 罗丽珠[1] 赖新春[1] 刘琴[1] 谭世勇[1] Wang Xiyang;Hao Qunqing;Zhang Yun;Pan Qifa;Chen Qiuyun;Feng Wei;Wang Yonghuan;Zhu Xiegang;Luo Lizhu;Lai Xinchun;Liu Qin;Tan Shiyong(Science and Technology on Surface Physics and Chemistry Laboratory,Mianyang 621908,China)

机构地区：[1]表面物理与化学重点实验室,四川绵阳621908

出　　处：《稀有金属材料与工程》2022年第8期2721-2726,共6页Rare Metal Materials and Engineering

基　　金：National Key Research and Development Program of China (2017YFA0303104);National Natural Science Foundation of China (11904335,11974319, 21903074, 11774320, 11904334, 12122409, 11874330);Special Funds of Institute of Materials (TP02201905)。

摘　　要：重费米子体系可以通过维度等调控手段来展现出丰富而有吸引力的量子基态。首次通过分子束外延技术在石墨烯/6H-SiC(0001)衬底成功制备了高质量的USb_(2)薄膜。结合反射式高能电子衍射、X射线衍射、电输运和X射线光电子能谱测量,证明了所制备的USb_(2)薄膜是高质量的单晶薄膜。此外,利用扫描隧道显微镜和角分辨光电子能谱对USb_(2)薄膜的表面形貌、原子结构和能带结构进行了表征。结果显示,生长的USb_(2)薄膜的表面原子结构、电输运性质和能带结构与块体USb_(2)单晶相似。最后,高质量USb_(2)薄膜的成功制备和表征为未来通过生长理想厚度的超薄膜在低维铀基重费米子系统中探索奇妙性能提供了宝贵的实验经验。Heavy fermion systems can exhibit abundant attractive quantum ground states by tuning external parameters such asdimension. High-quality USb_(2) thin films were prepared on graphene/6H-SiC(0001) surface by molecule beam epitaxy. Combining thereflection high energy electron diffraction, X-ray diffraction, electric transport and X-ray photoelectron spectroscopy measurements, itis demonstrated that the grown USb_(2) films are high-quality single crystals. Furthermore, the surface topography, atomic structure andband structures of USb_(2) films were characterized by scanning tunneling microscopy (STM) and angle-resolved photoelectronspectroscopy (ARPES). Results show that the surface atomic structure, electric transport property and band structure of the grownUSb_(2) films are similar to those of bulk USb_(2) single crystals. The preparation and characterization of high-quality USb_(2) films provideprecious experimental experiences for exploring fantastic properties of low-dimensional uranium-based heavy fermion systems bygrowing ultrathin films with desirable thickness in the future.

关 键 词：USb_(2)薄膜 扫描隧道显微镜 角分辨光电子能谱 电子结构 

分 类 号：TB383.2[一般工业技术—材料科学与工程]