检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:王月月 胡美华[1] 毕宁 韩鹏举 周绪彪 李尚升[1] Wang Yueyue;Hu Meihua;Bi Ning;Han Pengju;Zhou Xubiao;Li Shangsheng(School of Materials Science and Engineering,Henan Polytechnic University,Jiaozuo 454003,China;College of Chemistry and Chemical Engineering,Henan Polytechnic University,Jiaozuo 454003,China)
机构地区:[1]河南理工大学材料科学与工程学院,河南焦作454003 [2]河南理工大学化学化工学院,河南焦作454003
出 处:《稀有金属材料与工程》2022年第8期2942-2946,共5页Rare Metal Materials and Engineering
基 金:国家自然科学基金(52072113)。
摘 要:以一定化学计量比均匀混合的Si、Ge、B混合粉末为原材料,使用放电等离子烧结(SPS)一步法合金化制备了p型Si_(80)Ge_(20)B_(x)(x=0.5,1.0,2.0)合金热电材料,并对样品的组成、微观形貌、热电性能进行了表征与分析。结果表明,放电等离子烧结过程实现原位合金化并烧结为块体材料。随着B掺杂量的增加,电导率明显提升,热导率显著下降,当温度为950 K时,热导率为1.79 W/(m∙K)。在1050 K时,ZT值达到了0.899。球磨和掺杂的协同作用使得SiGe合金基体内产生不同类型的缺陷特征而散射不同波长的声子,导致硅锗合金热导率的降低。p-type Si_(80)Ge_(20)B_(x)(x=0.5,1.0,2.0) alloys thermoelectric materials were prepared by one-step alloying method using Si, Ge and B powders as raw materials. The composition, microstructure and thermoelectric properties of the samples were characterized and analyzed. The results show that in-situ one-step alloying followed by spark plasma sintering can be realized and bulk materials can be obtained. With the increase of B doping content, the electrical conductivity increases significantly and the thermal conductivity decreases significantly. When the temperature is 950 K, the thermal conductivity is 1.79 W/(m·K). At 1050 K, ZT reaches the maximum value of 0.899. Due to the synergistic effect of ball milling and doping, different types of defects are produced in SiGe structure matrix, which result in scattering of different wavelengths of phonons, leading to the decreas e of thermal conductivity of SiGe alloy.
分 类 号:TB34[一般工业技术—材料科学与工程]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.117