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作 者:马金龙 于宗光[2] 赵桂林[2] 刘国柱[2] 朱岱寅[1] MA Jinlong;YU Zongguang;ZHAO Guilin;LIU Guozhu;ZHU Daiyin(Key Laboratory of Radar and Microwave Photonic Technology,Ministry of Education,School of Electronic Infor-mation Engineering,Nanjing University of Aeronautics and Astronautics,Nanjing,211106,CHN;The 58th Institution of Electronic Science and Technology Group Corporation of China,Wuxi,Jiangsu,214035,CHN)
机构地区:[1]南京航空航天大学电子信息工程学院雷达与微波光子技术教育部重点实验室,南京211106 [2]中国电子科技集团公司第五十八研究所,江苏无锡214035
出 处:《固体电子学研究与进展》2022年第4期309-316,共8页Research & Progress of SSE
基 金:国家自然科学基金资助项目(62174150);江苏省自然科学基金资助项目(BK20211040)。
摘 要:针对反熔丝FPGA编程模式和用户模式不同的控制要求,基于Dickson电荷泵结构提出了一种新型的片上闭环电荷泵结构。新增加零伏电路实现了高电压与低电压之间有效隔离。电荷泵闭环控制机制有效地解决了启动慢的问题,保证了电路正确工作时序。仿真结果显示:在电源电压3.3 V、整体电路全负载的条件下,启动时间为6.23μs。采用0.18μm 1P3M 3.3 V/5 V CMOS工艺流片,电路编程成功并且功能正确。According to the different control requirements of anti-fuse FPGA programming mode and user mode,a new on-chip closed-loop charge pump structure was proposed based on Dickson charge pump structure.The purpose of effective isolation between high voltage and low voltage was achieved by adding a new zero-voltage circuit.The charge pump closed-loop control mechanism effectively solves the problems of slow start-up,and ensures the correct operation sequence of the circuit.The simulation results show that the starting time is 6.23μs under the condition of power supply voltage of 3.3 V and full load of the whole circuit.Taping-out with 0.18μm 1P3M 3.3 V/5 V CMOS process,the circuit is programmed successfully,the function is correct.
分 类 号:TN433[电子电信—微电子学与固体电子学]
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