Ⅱ类超晶格探测器背面减薄技术研究  

Research on Back-Thinning Technology for Type-ⅡSuperlattice Infrared Detector

作　　者：李春领[1] 封雪 邢伟荣[1] 温涛[1] 周朋[1] LI Chun-ling;FENG Xue;XING Wei-rong;WEN Tao;ZHOU Peng(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2022年第9期10-14,共5页Infrared

摘　　要：为了验证外延材料制备工艺试验的正确性,减少GaSb衬底对红外光的吸收,同时提升探测器的可靠性和长期稳定性,需要对Ⅱ类超晶格红外探测器的GaSb衬底进行减薄处理。采用机械抛光法和机械化学抛光法实现Ⅱ类超晶格探测器的GaSb衬底背面减薄,最后利用专用腐蚀液腐蚀的方法将GaSb衬底全部去除,使Ⅱ类超晶格材料完全露出。扫描电镜测试表明,超晶格材料腐蚀阻挡层能起到较好的阻挡作用,材料表面光滑,衬底无残留。探测器性能测试结果表明,减薄后的探测器芯片性能未发生变化。In order to verify the correctness of the epitaxial material preparation process test,reduce the absorption of infrared light by the GaSb substrate,and at the same time improve the reliability and long-term stability of the detector,the GaSb substrate of the type-Ⅱsuperlattice infrared detector needs to be thinned.The backside of the GaSb substrate of the type-Ⅱsuperlattice detector is thinned by mechanical polishing and chemical mechanical polishing.Finally,the GaSb substrate is completely removed by etching with a special etching liquid,and the type-Ⅱsuperlattice material is completely exposed.Scanning electron microscope experiment shows that the barrier layer of the superlattice material can play a good blocking role,the surface of the material is smooth,and the substrate has no residue.The detector performance test results show that the performance of the thinned detector chip does not change.

关 键 词：Ⅱ类超晶格 锑化镓衬底 背面减薄 腐蚀 

分 类 号：TN215[电子电信—物理电子学]