SiC功率器件制造中的湿法工艺设备研究  

Research on Wet Process Equipment in SiC Power Device Manufacturing

作　　者：宋文超[1] 贾祥晨 李家明 王洪建[1] 刘广杰 SONG Wenchao;JIA Xiangchen;LI Jiaming;WANG Hongjian;LIU Guangjie(The 45th Research Institute of CETC,Beijing 100176,China)

机构地区：[1]中国电子科技集团公司第四十五研究所,北京100176

出　　处：《电子工业专用设备》2022年第4期48-52,共5页Equipment for Electronic Products Manufacturing

摘　　要：简述了SiC功率器件制造工艺流程,对常用的抛光片清洗、RCA清洗、SPM湿法去胶、有机去胶、SiO2腐蚀、金属腐蚀和金属剥离等湿法设备进行了应用研究,对于提升SiC功率器件成品率起着重要的作用。This paper gives a brief description of manufacturing process of SiC power device,and carries out applied researches on common wet equipment such as lapped wafer cleaning,RCA cleaning,SPM PR strip,Solvent PR strip,SiO2 etch,metal etch and metal lift off device.Wet equipment plays significant role for increasing the yield of SiC power device.

关 键 词：SiC功率器件 抛光片清洗 有机去胶 金属湿法腐蚀 金属剥离 

分 类 号：TN305[电子电信—物理电子学]