高压IGBT芯片换流运行的热稳定性分析  

Thermal Stability Analysis of High-voltage IGBT Chips in Switching Operation

作　　者：范迦羽 郑飞麟 和峰 王耀华 彭程 李学宝 崔翔 FAN Jiayu;ZHENG Feilin;HE Feng;WANG Yaohua;PENG Cheng;LI Xuebao;CUI Xiang(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources(North China Electric Power University),Beijing 102206,China;State Key Laboratory of Advanced Power Transmission Technology(Beijing Institute of Smart Energy),Beijing 102209,China)

机构地区：[1]新能源电力系统国家重点实验室(华北电力大学),北京102206 [2]先进输电技术国家重点实验室(北京智慧能源研究院),北京102209

出　　处：《华北电力大学学报（自然科学版）》2022年第5期62-70,共9页Journal of North China Electric Power University：Natural Science Edition

基　　金：国家自然科学基金委员会-国家电网公司智能电网联合基金资助项目(U1766219);国家电网有限公司科技项目(520201190095)。

摘　　要：为保证高压绝缘栅双极型晶体管(Insulated Gate Bipolar Transistor,IGBT)器件换流运行时的热稳定性,需要根据IGBT芯片的电热特性和器件的散热设计,确定芯片运行的热稳定工作区,从而指导器件的运行条件控制。虽然针对芯片动静态损耗的热稳定性分析已经发展了许多年,但目前针对高压芯片的相关研究还较少。首先,通过实验测量了3.3 kV非穿通(Non-Punch Through,NPT)型和场截止(Field Stop,FS)型IGBT芯片的动静态特性,获得并分析了温度、电流及电压对动静态损耗特性的影响规律。在此基础上,给出了IGBT芯片的损耗拟合公式,通过对器件内部的热反馈过程进行分析,提出了具有解析形式且包含占空比、换流频率及电压电流等器件运行工况的IGBT芯片的热稳定性判据。根据所提的判据,分析了高压NPT型和FS型IGBT芯片的换流运行的热稳定性,可方便确定IGBT芯片在不同的换流条件下的最大工作频率和最大工作电流,简化了高压IGBT芯片的热稳定性分析,并可为高压器件的选型和损耗评估提供依据。To ensure the thermal stability of Insulated Gate Bipolar Transistor(IGBT) between the heat dissipation and cooling,the operation area of the high-voltage IGBT chip should be limited by its electrothermal characteristics and cooling design so as to guide the operation control of the device.The thermal stability analysis for chips’ static and dynamic loss has been developed for many years,but researches on the high-voltage chips are still few.In this paper,we first measured the static and dynamic characteristics of 3.3 kV NPT and FS IGBT chips by experiments and obtained the influence law of temperature,current and voltage on dynamic and static loss characteristics.Based on the experiment results,the loss fitting formulas were proposed in this paper.Then,by modeling the thermal feedback process in the device,the analytical thermal stability criterions for IGBT chip were put forward,which consider the operation conditions like duty cycle and switching frequency.According to the proposed criteria,the thermal stability of NPT IGBT and FS IGBT were analyzed in this paper respectively,so that the maximum switching frequency and the maximum current under different operation conditions can be easily determined.Meanwhile,the proposed criteria simplify the thermal stability analysis of the high-voltage IGBT chips and provide a guidance for the device selection and the loss evaluation.

关 键 词：高压IGBT芯片 热稳定性 换流运行 

分 类 号：TM89[电气工程—高电压与绝缘技术]