一种基于热阻抗模型的IGBT结温估计方法  

An IGBT Junction Temperature Estimation Method Based on the Thermal Impedance Model

作　　者：李哲 厉成元 袁媛 陈玉杰 王自满 LI Zhe;LI Chengyuan;YUAN Yuan;CHEN Yujie;WANG Ziman(Tianjin Research Institute of Electric Science Co.,Ltd.,Tianjin 300180,China)

机构地区：[1]天津电气科学研究院有限公司,天津300180

出　　处：《电气传动》2022年第19期53-59,共7页Electric Drive

基　　金：天津电气科学研究院有限公司创新基金项目:1 500 V DC大功率三电平储能变流器关键技术研究及应用(YF2021ZL001)。

摘　　要：绝缘栅双极型晶体管(IGBT)在工业领域应用广泛,但IGBT结温易受工况变化及其所处散热环境影响,散热通道不畅会使IGBT模块处于高温状态,长期在高温状态下工作严重影响器件使用效率。由此,提出一种基于热阻抗模型的IGBT结温估计方法。将IGBT模块各功能层抽象为一个热阻模型,通过建模仿真获得某确定工况下IGBT的估计结温。在同工况下,通过实验采集IGBT温度值,将建模结果与实验结果相验证,进而证明基于阻抗模型的IGBT结温估计的准确性。Insulated gate bipolar transistor(IGBT)is widely used in the industry,but the IGBT junction temperature is easily affected by changes in operating conditions and the heat dissipation environment in which it is located. Poor heat dissipation channels will cause the IGBT module to remain in a high temperature state for a long time and it affects the efficiency of the device. So an IGBT junction temperature estimation method based on the thermal impedance model was proposed. Each functional layer of the IGBT module was abstracted as a thermal resistance model,the estimated junction temperature of the IGBT under certain conditions through the modeling and simulation was obtained. Under the same working conditions,the IGBT temperature was collected through experiments,the simulation results were verified with experiments,which prove the accuracy of IGBT junction temperature estimation based on impedance model.

关 键 词：绝缘栅双极型晶体管 热阻模型 结温估计 建模仿真 

分 类 号：TM46[电气工程—电器]