Efficient p-doping of P3HT for hole transporting materials in perovskite solar cells  被引量:3

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作  者:Su-Peng Liu Xin-Can Qiu Jing Guo Ping-An Chen Yu Liu Huan Wei Jiang-Nan Xia Hai-Hong Xie Yuan-Yuan Hu 

机构地区:[1]Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province,School of Physics and Electronics,Hunan University,Changsha,410082,China [2]Shenzhen Research Institute of Hunan University,Shenzhen,518063,China

出  处:《Rare Metals》2022年第8期2575-2581,共7页稀有金属(英文版)

基  金:financially supported by the National Natural Science Foundation of China (Nos.62074054 and U21A20497);the Natural Science Foundation of Hunan Province (Nos.2018RS053,2019GK2245 and 2020JJ1002);Shenzhen Science and Technology Innovation Commission (No. RCYX20200714114537036)

摘  要:Developing hole transporting materials(HTMs)appropriate for large-area and high-performance perovskite solar cells(PSCs)is an important issue.In this work,we report using a widely used organic semiconductor P3 HT in combination with an efficient organic salt dopant trityl tetrakis(pentafluorophenyl)borate(TrTFPB)as HTM in PSCs.It is shown that the dopant can significantly enhance the conductivity of P3 HT while slightly change the film morphology.By doping P3 HT with different doping levels.

关 键 词:morphology. DOPING PEROVSKITE 

分 类 号:TM914.4[电气工程—电力电子与电力传动] TB34[一般工业技术—材料科学与工程]

 

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